Matsuoka Lab.
New Industry Creation Hatchery Center
Takashi Matsuoka
Emeritus Professor of Tohoku University

Articles

Papers and Presentations in international conferences are shown below, divided into four groups of (1) DFB Lasers for Optical Communications Systems and Related Issues, (2) Nitride Semiconductors, (3) Ⅱ–Ⅵ Semiconductors, and (4) Others.

InP and Related Compounds

DFB Lasers for Optical Communications Systems and Related Issues

  1. T. Matsuoka, K. Takahei, Y. Noguchi, and H. Nagai, “1.5 µm Region InP/GaInAsP Buried Heterostructure Lasers on Semi-Insulating Substrate”, Electron. Lett., 17, Issue 1, pp. 12-14 (1981); DOI: 10.1049/el:19810010.
  2. T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami, “CW Operation of DFBBH GaInAsP/InP Lasers in 1.5 µm Wavelength Region”, Electron. Lett., 18, Issue 1, pp. 27-28 (1982); DOI: 10.1049/el:19820020.
  3. T. Matsuoka, Y. Suzuki, Y. Noguchi, and H. Nagai, “GaInAsP/InP DH Laser on Semi-Insulating InP Substrate with Terrace Structure”, Electron. Lett., 18, Issue 9, pp. 359-361 (1982); DOI: 10.1049/el:19820246.
  4. K. Iwashita, K. Nakagawa, T. Matsuoka, and M. Nakahara, “400Mbit/s Transmission Test using a 1.53 µm DFB Laser Diode and 104 km Single-Mode Fibre”, Electron. Lett., 18, Issue 22, pp. 937-938 (1982); DOI: 10.1049/el:19820643.
  5. Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, and T. Ikegami, “New 1.5 µm Wavelength GaInAsP/InP Distributed Feedback Laser”, Electron. Lett., 18, 23, pp. 1006-1008 (1982); DOI: 10.1049/el:19820689.
  6. H. Nagai, Y. Noguchi, T. Matsuoka, and Y. Suzuki, “Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers”, Jpn. J. Appl. Phys., 22, No. 5A, pp. L291-L293 (1983); DOI: 10.1143/JJAP.22.L291.
  7. H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, and H. Nagai, “Hybrid LPE/MBE Grown InGaAsP/InP DFB Lasers”, Electron. Lett., 19, Issue 14, pp. 507-509 (1983); DOI: 10.1049/el:19830345.
  8. M. Kitamura, M. Seki, M. Yamaguchi, I. Mito, Ke. Kobayashi, Ko. Kobayashi, and T. Matsuoka, “High-Power Single-Longitudinal-Mode Operation of 1.3 µm DFB-DC-PBH-LD”, Electron. Lett., 19, Issue 20, pp. 840-841 (1983); DOI: 10.1049/el:19830572.
  9. Y. Itaya, T. Matsuoka, K. Kuroiwa, and T. Ikegami, “Longitudinal Mode Behaviors of 1.5 µm Range InGaAsP/InP Distributed Feedback Lasers”, IEEE J. Quantum Electron., QE-20, 3, pp. 230-235 (1984); DOI: 10.1109/JQE.1984.1072378.
  10. T. Matsuoka, H. Nagai, Y. Noguchi, Y. Suzuki, and Y. Kawaguchi, “Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties”, Jpn. J. Appl. Phys., 23, No. 3A, pp. L138-L140 (1984); DOI: 10.1143/JJAP.23.L138.
  11. Y. Noguchi, Y. Suzuki, Y. Matsuoka, and H. Nagai, “InP/InGaAsP p-Type Substrate and Mass Transported Doubly Buried Heterostructure Laser”, Electron. Lett., 20, Issue 19, pp. 769-771 (1984); DOI: 10.1049/el:19840524.
  12. T. Matsuoka, H. Nagai, Y. Suzuki, Y. Noguchi, and K. Wakita, “Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet”, Jpn. J. Appl. Phys., 23, 10, pp. L782-L784 (1984); DOI: 10.1143/JJAP.23.L782.
  13. Y. Suzuki, H. Nagai, Y. Noguchi, T. Matsuoka, and K. Kurumada, “High-Power SLM Operation 1.5 µm InP/InGaAsP DFB LD with Doubly Buried Heterostructure on p-Type InP Substrate”, Electron. Lett., 20, Issue 21, pp. 881-882 (1984); DOI: 10.1049/el:19840598.
  14. Y. Yoshikuni, T. Matsuoka, N. Yamanaka, and G. Motosugi, “Fine Structures in the Broadened Line of Distributed Feedback Lasers under High-Speed Direct Modulation”, Appl. Phys. Lett., 45, Issue 8, pp. 820-823 (1984); DOI: 10.1063/1.95430.
  15. 岩下 克､中川 清司､松岡 隆志, “単一縦モ−ド半導体レーザを用いた高速光ファイバ伝送系の符号誤り率特性”, 電子通信学会, J67-B, 12, pp. 1415-1422 (1984).
  16. H. Nagai, Y. Noguchi, and T. Matsuoka, “Thermal Deformation of Surface Corrugation on InGaAsP Crystals”, J. Crystal Growth, 71, Issue 1, pp. 225-231 (1985); DOI: 10.1016/0022-0248(85)90066-1.
  17. T. Matsuoka, Y. Yoshikuni, and G. Motosugi, “Dependence of Single-Longitudinal-Mode Probability on DFB Laser Facet Structure”, Electron. Lett., 21, Issue 24, pp. 1151-1152 (1985); DOI: 10.1049/el:19850814.
  18. H. Kawaguchi, K. Inoue, T. Matsuoka, and K. Otsuka, “Bistable Output Characteristics in Semiconductor Laser Injection Locking”, IEEE J. Quantum Electron., QE-21, 9, pp. 1314-1317 (1985); DOI: 10.1109/JQE.1985.1072847.
  19. T. Matsuoka, H. Nagai, and Y. Yoshikuni, “Verification of the Light Phase Effect at the Facet on DFB Laser Properties”, IEEE J. Quantum Electron., QE-21, 12, pp. 1880-1886 (1985); DOI: 10.1109/JQE.1985.1072596.
  20. H. Nagai, T. Matsuoka, Y. Noguchi, Y. Suzuki,and Y. Yoshikuni, “InGaAsP/InP DFB-BH Lasers with Both Facets Cleaved Structures”, IEEE J. Quantum Electron., QE-22, 3, pp. 450-457 (1986); DOI: 10.1109/JQE.1986.1072981.
  21. T. Matsuoka, “Temperature Range for DFB Mode Oscillation in 1.5 µm InGaAsP/InP DFB Lasers”, Jpn. J. Appl. Phys., 25, No. 8R, pp. 1206-1210 (1986); DOI: 10.1143/JJAP.25.1206.
  22. T. Matsuoka and H. Nagai, “InP Etchant for Submicron Patterns”, J. Electrochem. Soc., 133, 12, pp. 2485-2491 (1986); DOI: 10.1149/1.2108455.
  23. J. Yoshida, Y. Itaya, Y. Noguchi, T. Matsuoka, and Y. Nakano, “Sufficiently Side-Mode-Suppressed High-Output Power 1.5 µm DFB Lasers”, Electron. Lett., 22, Issue 6, pp. 327-328 (1986); DOI: 10.1049/el:19860224.
  24. Y. Yoshikuni, K. Oe, G. Motosugi, and T. Matsuoka, “Broad Wavelength Tuning under Single-Mode Oscillation with a Multi-Electrode Distributed Feedback Laser”, Electron. Lett., 22, Issue 22, pp. 1153-1154 (1986); DOI: 10.1049/el:19860789.
  25. 松岡 隆志、吉国 裕三、本杉 常治、遠谷 光広, “高出力1.5 µm帯分布帰還形レーザの設計とその特性”, 信学会, J70-C, 3, pp. 369-378 (1987).
  26. T. Matsuoka and K. Iwashita, “History of Distributed Feedback Laser”, Proc. History of Electrotechnology Conference (HISTELCON 2017), pp. 127-132 (2017); DOI: 10.1109/HISTELCON.2017.8535593.

Nitride Semiconductors

  1. T. Sasaki and T. Matsuoka, “Substrate-Polarity Dependence of Metal-Organic Vapor-Phase Epitaxy-Grown GaN on SiC”, J. Appl. Phys., 64, Issue 9, pp. 4531-4535 (1988); DOI: 10.1063/1.341281.
  2. T. Sasaki, T. Matsuoka, and A. Katsui, “MOVPE-Grown GaN on Polar Planes of 6H-SiC”, Appl. Surf. Sci., 41/42, pp. 504-508 (1989); DOI: 10.1016/0169-4332(89)90110-4. (published in 1990.)
  3. T. Matsuoka, H. Tanaka, T. Sasaki, and A. Katsui, “Wide-Gap Semiconductor (In, Ga)N”, in Inst. Phys. Conf. Ser., 106, pp. 141-146 (1990).
  4. T. Matsuoka, T. Sasaki, and A. Katsui, “Growth and Properties of a Wide-Gap Semiconductor InGaN”, J. Optoelectronics, 5, Issue 1, pp. 53-64 (1990).
  5. H. Satoh, T. Sasaki, T. Matsuoka, and A. Katsui, “Crystallinity of GaN Film Grown by ECR Plasma-Excited MOVPE”, Jpn. J. Appl. Phys., 29, No. 9R, pp. 1654-1655 (1990); DOI: 10.1143/JJAP.29.1654.
  6. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, “Photoluminescence of InGaN Films Grown at High Temperature by MOVPE”, Appl. Phys. Lett., 59, Issue 18, pp. 2251-2253 (1991); DOI: 10.1063/1.106086.
  7. H. Tanaka, F. Shimokawa, T. Sasaki, and T. Matsuoka, “Reactive Fast Atom Beam Etching of a Wide-Gap Semiconductor GaN”, J. Optoelectronics, 6, 1, pp. 150-153 (1991).
  8. T. Matsuoka, N. Yoshimoto, T. Sasaki, and A. Katsui, “Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE”, J. Electronic Mat., 21, Issue 2, pp. 157-163 (1992); DOI: 10.1007/BF02655831.
  9. < Invited Paper >
    T. Matsuoka, “Current Status of GaN and Compounds as Wide-Gap Semiconductor”, J. Crystal Growth, 124, Issue 1-4, pp. 433-438 (1992); DOI: 10.1016/0022-0248(92)90496-6.
  10. < Invited Paper >
    T. Matsuoka, A. Ohki, T. Ohno, and Y. Kawaguchi, “Comparison of GaN- and ZnSe- Based Materials for Light Emitters”, J. Crystal Growth, 138, Issue 1-4, pp. 727-736 (1994); DOI: 10.1016/0022-0248(94)90898-2.
  11. T. Sasaki and T. Matsuoka, “Analysis of 2-Step Growth Conditions for GaN on an AlN Buffer Layer”, J. Appl. Phys., 77, Issue 1, pp. 192-200 (1995); DOI: 10.1063/1.359368.
  12. < Invited Paper >
    T. Matsuoka, “The InGaAlN System as a Competitor of ZnSe”, Phys. Status Solidi B, 187, Issue 2, pp. 471-476 (1995); DOI: 10.1002/pssb.2221870228.
  13. < Invited Paper >
    T. Matsuoka,“InGaAlN and Ⅱ–Ⅵ Systems for Blue-Green Light-Emitting Devices”, Advanced Mat., 8, 6, pp. 469-479 (1996); DOI: 10.1002/adma.19960080603.
  14. < Invited Paper >
    T. Matsuoka, “Lattice-Matching Growth of InGaAlN Systems”, Proc. Fall Meeting of Material Research Symposium, 395, pp. 39-50 (1996).
  15. H. Tanaka, A. Nakadaira, and T. Matsuoka, “Reactive Fast-Atom-Beam-Etching of GaN, InGaN, and AlGaN using Cl2”, Proc. the Topical Workshop on Ⅲ-Ⅴ Nitrides, pp. 71-73, Elsevier Science Ltd. (1997).
  16. T. Matsuoka, “Calculation of Unstable Mixing Region in Wurtzite In1-X-YGaXAlYN”, Appl. Phys. Lett., 71, Issue 1, pp. 105-106 (1997); DOI: 10.1063/1.119440.
  17. T. Matsuoka, “Unstable Mixing Region in Wurtzite In1-X-YGaXAlYN”, J. Crystal Growth, 189/190, pp. 19-23, (1998); DOI: 10.1016/S0022-0248(98)00148-1.
  18. T. Matsuoka, “Phase Separation in Wurtzite In1-X-YGaXAlYN”, MRS Internet J. Nitride Semicond. Res., 3, article 54 pp. 1-5 (1998); DOI: 10.1557/S1092578300001265.
  19. T. Matsuoka and T. Ishii, “Polarity of GaN Grown on (001) β-LiGaO2”, in Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp. 11-14 (2000).
  20. T. Matsuoka, T. Itoh,and T. Kainoh, “First Plastic Optical Fiber Transmission Experiment using Blue-Green LEDs with Intensity Modulation/Direct Detection”, Electron. Lett., 36, Issue 22, pp. 1836-1837 (2000); DOI: 10.1049/el:20001336.
  21. T. Matsuoka, T. Ohno, A. Ohki, Y. Kawaguchi, “Green LEDs Look Good for Plastic-Fiber LAN Transmission”, Laser Focus World, 37, Issue 1, p. 9 (2001).
  22. T. Matsuoka and E. Hagiwara, “GaN Growth on Novel Lattice-Matching Substrate -Tilted MPlane Sapphire”, Phys. Status Solidi A, 188, Issue 2, pp. 485-489 (2001); DOI: 10.1002/1521-396X(200112)188:2<485::AID-PSSA485>3.0.CO;2-%23.
  23. T. Matsuoka, H. Okamoto,M. Nakao,H. Harima,andE. Kurimoto,“Optical Band-Gap Energy of Wurtzite InN”, Appl. Phys. Lett., 81, 7, pp. 1246-1248 (2002); DOI: 10.1063/1.1499753.
  24. T. Matsuoka, M. Nakao, H. Okamoto, H. Harima,and E. Kurimoto,“Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN”, Jpn. J. Appl. Phys., 42, No. 4S, pp. 2288-2290 (2003); DOI: 10.1143/JJAP.42.2288.
  25. T. Matsuoka, H. Okamoto, and M. Nakao, “Growth of Wurtzite InN using MOVPE and its Optical Characteristics”, Phys. Status Solidi C, 0, Issue 7, pp. 2806-2809 (2003); DOI: 10.1002/pssc.200303301.
  26. T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto, “MOVPE Growth and Photoluminescence of Wurtzite InN”, J. Cryst. Growth, 269, Issue 1, pp. 139-144 (2004); DOI: 10.1016/j.jcrysgro.2004.05.057.
  27. < Invited Paper >
    T. Matsuoka, “Progress in Nitride Semiconductors from GaN to InN — MOVPE Growth and Characteristics;”, SSuperlattices Microstruct., 37, pp. 19-32 (2005); DOI: 10.1016/j.spmi.2004.06.003.
  28. T. Mitate, H. Takahata, S. Mizuno,T. Matsuoka, and N. Kuwano, “InN Polarity Determination by Convergent-Beam Electron Diffraction”, Appl. Phys. Lett., 86, Issue 13, article 134103 pp. 1-3 (March 28, 2005); DOI: 10.1063/1.1885174.
  29. < Invited Paper >
    T. Matsuoka, “Nitride Semiconductor Technologies for Blue Lasers”, Proc. SPIE, "Optomechatronic Micro/Nano Devices and Components”, 6050, article 60500K pp. 1-9 (2006); DOI: 10.1117/12.659862.
  30. T. Matsuoka, T. Mitate, H. Takahata, S. Mizuno, Y. Uchiyama, A. Sasaki, M. Yoshimoto, T. Ohnishi, and M. Sumiya, “N-Polarity GaN on Sapphire Substrate Grown by MOVPE”, Phys. Status Solidi B, 243, Issue 7, pp. 1446-1450 (2006); DOI: 10.1002/pssb.200565456.
  31. J. J. Kim, E. Ikenaga, M. Kobata,A. Takeuchi, M. Awaji, H. Makino, P. P. Chen, A. Yamamoto, T. Matsuoka, D. Miwa, Y. Nishino, T. Yamamoto, T. Yao, and K. Kobayashi, “High Resolution Hard X-Ray Photoemission using Synchrotron Radiation as an Essential Tool for Characterization of Thin Solid Films”, Appl. Surf. Sci., 252, Issue 15, pp. 5602–5606 (2006); DOI: 10.1016/j.apsusc.2005.12.032.
  32. < Invited Paper >
    T. Matsuoka, “New Possibility of MOVPE–Growth in GaN and InN: Polarization in GaN and Nitrogen-Incorporation in InN —”, Proc. SPIE, "Gallium Nitride Materials and Devices Ⅱ”, 6473, pp. 1-12 (2007); DOI: 10.1117/12.707607.
  33. T. Kimura and T. Matsuoka, “Calculation of Phase Separation in Wurtzite In1-x-y-zGaxAlyBzN”, Jpn. J. Appl. Phys., 46, No. 6L(24), pp. L574-L576 (2007); DOI: 10.1143/JJAP.46.L574.
  34. M. Nakao, T. Shimada, M. Wakaba, N. Motegi, A. Gomyo, S. Mizuno, and T. Matsuoka, “1.5-μm Emission of Slightly Oxidized InN Crystals Grown by MOVPE”, Phys. Status Solidi C, 5, Issue 9, pp. 3063-3065 (2008); DOI: 10.1002/pssc.200779273.
  35. < Invited Paper >
    T. Matsuoka and M. Nakao, “Mysterious Material InN in Nitride Semiconductors, – What's the Bandgap Energy and its Application?”, The 2007 IEEE 19th Intern. Conf. Indium Phosphide and Related Mat. (IPRM) Proceedings, pp. 372-375 (2008); DOI: 10.1109/ICIPRM.2007.381201.
  36. < Invited Paper >
    T. Matsuoka, “Progress in MOVPE-Growth of GaN to InN”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅴ”, 6900, article 69000S pp. 1-6 (2008); DOI: 10.1117/12.768644.
  37. Y. H. Liu, T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Y. Ji, and T. Matsuoka, “MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor”, Phys. Status Solidi C, 6, Issue S2, pp. S381-S384 (2009); DOI: 10.1002/pssc.200880914.
  38. M. Nakao, T. Kimura, Y. H. Liu, S. Y. Ji, and T. Matsuoka, “Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers”, Phys. Status Solidi C, 6, S2, pp. S893-S896 (2009); DOI: 10.1002/pssc.200880909.
  39. S. Miyazawa, S. Ichikawa, Y. H. Liu, S. Y. Ji, T. Matsuoka, and H. Nakae, “A Novel Substrate LaBGeO5 Lattice-Matching to InN”, Phys. Status Solidi A, 208, Issue 5, pp. 1195-1198 (2011); DOI: 10.1002/pssa.201000909.
  40. Y. T. Zhang, Y. H. Liu, T. Kimura, M. Hirata, K. Prasertsuk, R. Katayama, and T. Matsuoka, “Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi C, 8, Issue 2, pp. 482–484 (2011); DOI: 10.1002/pssc.201000464.
  41. T. Hanada, T. Shimada, S. Y. Ji, K. Hobo, Y. H. Liu, and T. Matsuoka, “Strain Relaxation Mechanism of InGaN Thin Film Grown on m-GaN”, Phys. Status Solidi C, 8, Issue 2, pp. 444-446 (2011); DOI: 10.1002/pssc.201000565.
  42. < Invited Paper >
    T. Matsuoka,Y. H. Liu, T.Kimura, Y. T. Zhang,K.Prasertsuk, and R.Katayama, “Paving the Way to High-Quality Indium Nitride: The Effects of Pressurized Reactor -”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅷ”, 7945, article 794519 pp. 1-5 (2011); DOI: 10.1117/12.869771.
  43. K. Prasertsuk, Y. H. Liu, T. Kimura, Y. T. Zhang, T. Iwabuchi, R. Katayama, and T. Matsuoka, “Relationship between Residual Carrier Density and Phase Purity in InN Grown by Pressurized-Reactor MOVPE”, Phys. Status Solidi C, 9, 3-4, pp. 681–684 (2012); DOI:10.1002/pssc.201100404.
  44. J. G. Kim, Y. Kamei, A. Kimura, N. Hasuike, H. Harima, K. Kisoda, Y. H. Liu, and T. Matsuoka, “Raman-scattering Characterization of InN Films Grown by Pressurized Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi B, 249, Issue 4, pp. 779-783 (2012); DOI: 10.1002/pssb.201147452.
  45. T. Kimura, K. Prasertsuk, Y. T. Zhang, Y. H. Liu, R .Katayama, and T. Matsuoka, “Phase Diagram on Phase Purity of InN Grown Pressurized-Reactor MOVPE”, Phys. Status Solidi C, 9, Issue 3-4, pp. 654-657 (2012); DOI: 10.1002/pssc.201100390.
  46. J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of Nitridation on Indium-Composition of InGaN Films”, Key Eng. Mater., 508, pp. 193-198 (2012); DOI: 10.4028/www.scientific.net/KEM.508.193.
  47. R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, S .Kurokawa, N. Fujii, and T. Matsuoka, “Optical Properties of the Periodic Polarity-Inverted GaN Waveguides”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅸ”, 8268, article 826814 pp. 1-10 (2012); DOI: 10.1117/12.909831.
  48. K. Shojiki, T.Hanada, T.Shimada, Y. H.Liu, R. Katayama,and T. Matsuoka, “Tilted Domain and Indium Content of MOVPE-Grown InGaN Layer on m-Plane GaN Substrate”, Jpn. J. Appl. Phys., 51, No.4S, article 04DH01 pp. 1-4 (2012); DOI: 10.1143/JJAP.51.04DH01.
  49. T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanebe, N. Usami, R. Katayama, and T. Matsuoka, “Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN”, Jpn. J. Appl. Phys., 51, No. 4S, article 04DH02 pp. 1-4 (2012); DOI: 10.1143/JJAP.51.04DH02.
  50. K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, and T. Suemitsu, “AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks”, Phys. Status Solidi C, 10, Issue 5, pp. 790-793 (2013); DOI: 10.1002/pssc.201200609.
  51. J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Investigation of Indium Incorporation into InGaN by Nitridation of Sapphire Substrate in MOVPE”, Phys. Status Solidi C, 10, Issue 3, pp. 417-420 (2013); DOI: 10.1002/pssc.201200667.
  52. Y. T. Zhang, T. Kimura, K. Prasertsuk, T. Iwabuchi, S. Kumar, Y. H. Liu, R. Katayama, and T. Matsuoka, “Optical Properties of InN Films Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy”, Thin Solid Films, 536, pp. 152-155 (2013); DOI: 10.1016/j.tsf.2013.04.004.
  53. 小林 健悟, 吉田 智洋, 尾辻 泰一, 片山 竜二, 松岡 隆志, 末光 哲也, “SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT”, 信学技報, 112, 380, pp. 75-78 (2013).
  54. T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka, “Improvement of Surface Morphology of Nitrogen-Polar GaN by Introducing Indium Surfactant during MOVPE Growth”, Jpn. J. Appl. Phys., 53, No. 8, article 085501 pp. 1-4 (2014); DOI: 10.7567/JJAP.53.085501.
  55. T. Tanikawa, K. Shojiki, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Enhancement of Surface Migration by Mg doping in the Metalorganic Vapor Phase Epitaxy of (0001) GaN/Sapphire”, Jpn. J. Appl. Phys., 53, No. 5S1, article 05FL05 pp. 1-4 (2014); DOI: 10.7567/JJAP.53.05FL05.
  56. K. Shojiki, J. H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of c-Plane Sapphire Substrate Miscut-Angle on Indium Content of MOVPE-Grown N-Polar InGaN”, Jpn. J. Appl. Phys., 53, No. 5S1, article 05FL07 pp. 1-5 (2014); DOI: 10.7567/JJAP.53.05FL07.
  57. J. H. Choi,K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of Sapphire Nitridation and Group-Ⅲ Source FlowRate Ratio on In-Incorporation into InGaN Grown by Metalorganic Vapor Phase Epitaxy”, J. Nanosci. Nanotechnol., 14, No. 8, pp. 6112-6115 (2014); DOI: 10.1166/jnn.2014.8306.
  58. T. Matsuoka, Foreword in “Progresses and Future Prospects in Nitride Semiconductors: Crystal Growth and Device Applications”, Jpn. J. Appl. Phys., 53, No. 10, article 100200 p. 1 (2014); DOI: 10.7567/JJAP.53.100200.
  59. T. Matsuoka, “Overview of Nitride Semiconductors”, Int. J. Optomechatronics, 9, Issue 1, pp. 1-8 (2015); DOI: 10.1080/15599612.2014.944292.
  60. K. Shojiki, T. Tanikawa, J. H. Choi, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Red to Blue Wavelength Emission of N-Polar (0001) InGaN Light-Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy”, Appl. Phys. Express, 8, No. 6, article 061005 pp. 1-4 (2015); DOI: 10.7567/APEX.8.061005.
  61. K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Suppression of Metastable-Phase Inclusion in N-Polar (0001) InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy”, Appl. Phys. Lett., 106, Issue 22, article 222102 pp. 1-4 (2015); DOI: 10.1063/1.4922131.
  62. T. Aoki, T. Tanikawa, R. Katayama, T. Matsuoka, and K. Shiojima, “Electrical Characteristics of N-Polar (0001) p-Type GaN Schottky Contacts”, Jpn. J. Appl. Phys., 55, No. 4S, article 04EJ09 pp. 1-5 (2016); DOI: 10.7567/JJAP.55.04EJ09.
  63. J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Polarity Control of GaN Grown on PLD-AlN/GaN Templates by MOVPE”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FA04 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FA04.
  64. K. Shojiki, T. Hanada, T. Tanikawa, Y. Imai, S. Kimura, R. Nonoda, S. Kuboya, R. Katayama, and T. Matsuoka, “Homogeneity Improvement of N-Polar (0001)InGaN/GaN Multiple Quantum Wells by Changing Substrate Off-Cut-Angle Direction”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FA09 pp. 1-8 (2016); DOI: 10.7567/JJAP.55.05FA09.
  65. A. Yamamoto, K. Kodama, N. Shigekawa, T. Matsuoka, and M. Kuzuhara, “Low-Temperature (≧ 400°C) Growth of InN by Metalorganic Vapor Phase Epitaxy using an NH3 Decomposition Catalyst”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FD04 pp. 1-5 (2016); DOI: 10.7567/JJAP.55.05FD04.
  66. R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka, “Effects of Mg/Ga and Ⅴ/Ⅲ Source Ratios on Hole Concentration of N-Polar (0001) p-Type GaN Grown by MOVPE”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FE01 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FE01.
  67. T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, and T. Matsuoka, “Large Stokes Shift in N-Polar (0001) InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes”, Jpn. J. Appl. Phys., 55, No 5S, article 05FJ03 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FJ03.
  68. A. Yamamoto, K.Kodama, T.Matsuoka, and M.Kuzuhara, “Low-Temperature (≦ 600°C) Growth of High-Quality InXGa1-XN (x ∼ 0.3) by Metalorganic Vapor Phase Epitaxy using an NH3 Decomposition Catalyst”, Jpn. J. Appl. Phys., 56, No. 4, article 041001 pp. 1-5 (2017); DOI: 10.7567/JJAP.56.041001.
  69. T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, T. Matsuoka, Y. Honda, and H. Amano, “Absolute Technique for Measuring Internal Electric Fields in InGaN/GaN Light-Emitting Diodes by Applicable to All Crystal Orientations”, Appl. Phys. Express, 10, No. 8, article 082101 pp. 1-4 (2017); DOI: 10.7567/APEX.10.082101.
  70. T. Tanikawa, S. Kuboya, and T. Matsuoka, “Control of Impurity Concentration in N-Polar (0001)GaN Grown by Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi B, 254, Issue 8, article 1600751 pp. 1-5 (2017); DOI: 10.1002/pssb.201600751.
  71. T. Iwabuchi, S. Kuboya, T. Tanikawa, T. Hanada, R. Katayama, T. Fukuda, and T. Matsuoka, “Ga-Polar GaN Film grown by MOVPE on Cleaved ScAlMgO4(0001) Substrate with Millimeter Scale Wide Terraces”, Phys. Status Solidi A, 214, Issue 9, article 1600754 pp. 1-8 (2017); DOI: 10.1002/pssa.201600754.
  72. T. Matsuoka, “History of Blue LED Consisted of Nitride Semiconductors”, Proc. History of Electro-technology Conference (HISTELCON 2017), pp. 121-126 (2017); DOI: 10.1109/HISTELCON.2017.8535864.
  73. K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka, “Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers”, Appl. Phys. Express, 10, No,10, article 101001 pp. 1-4 (2017); DOI: 10.7567/APEX.10.101001.
  74. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, “N-Polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE”, IEICE Technical Report, ED2017-26, CPM2017-12, SDM2017-20, pp. 59-64 (2017).
  75. 谷川 智之, プラスラットスック キャッティウット, 木村 健司, 窪谷 茂幸, 松岡 隆志, “有機金属気相成長法によるN極性窒化物半導体の成長技術”, 日本結晶成長学会誌, 45, No. 1, pp. 1-8 (2018); DOI: 10.19009/jjacg.3-45-1-01.
  76. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, “N-Polar GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching”, Appl. Phys. Express, 11, No. 1, article 015503 pp. 1-4 (2018); DOI: 10.7567/APEX.11.015503.
  77. 41th Best Paper Award of JSAP
    T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka, “Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photon-excitation Photoluminescence”, Appl. Phys. Express, 11, article 031004 pp. 1-4 (2018); DOI: 10.7567/APEX.11.031004.
  78. T. Hanada, H. Tajiri, O. Sakata, T. Fukuda, and T. Matsuoka, “Characterization of the ScAlMgO4 Cleaving Layer by X-Ray Crystal Truncation Rod Scattering”, J. Appl. Phys., 123, Issue 20, article 205305 pp. 1-8 (2018); DOI: 10.1063/1.5031024.
  79. K. Ohnishi, S. Kuboya, T. Tanikawa, T. Iwabuchi, K. Yamamura, N. Hasuike, H. Harima, T. Fukuda, and T. Matsuoka, “Reuse of ScAlMgO4 Substrates Utilized for Halide Vapor Phase Epitaxy of GaN”, Jpn. J. Appl. Phys., 58, No. SC, article SC1023, pp. 1-5 (2019); DOI: 10.7567/1347-4065/ab06ab.
  80. T. Matsuoka, “Current Status, and Future of Research on Optical and Electrical Semiconductor Devices”, IEEE Xplore digital library published in 2019 IEEE 5th International Workshop on Metrology for AeroSpace (MetroAeroSpace), pp. 154-159, DOI: 10.1109/MetroAeroSpace.2019.8869693.
  81. V. Suresh Kumar, S. Y. Ji, Y. T. Zhang, K. Shojiki, J. H. Choi, T. Kimura, T. Hanada, R. Katayama, and T. Matsuoka, “Dependence of the Ⅴ/Ⅲ Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy”, J. Nanosci. Nanotechnol., 20, pp. 2979-2986 (2020); DOI: 10.1166/jnn.2020.17466.
  82. K. Prasertsuk, T. Suemitsu, and T. Matsuoka, “Reverse Bias Annealing Effects in N-Polar GaN/AlGaN Metal-Insulator-Semiconductor High Electron Mobility Transistors”, Jpn. J. Appl. Phys., 61, No. SA, article SA1006 pp. 1-6 (2022); DOI: 10.35848/1347-4065/ac2214.
  83. T. M. Inerbaev, T. Matsuoka, and Y. Kawazoe, “Optical Band Gap Energy Values in Wurtzite InxGa1-xN”, Bulletin of The University of Karaganda-Physics, 105, Issue 1, pp. 107-116 (2022); DOI: 10.31489/2022PH1/107-116.
  84. T. Matsuoka, T. Mitate, S. Mizuno, H. Takahata, and T. Tanikawa, “N-Polar Growth of Nitride Semiconductors with MOVPE and its Applications”, J. Cryst. Growth, 606, 127056 (2023); DOI: 10.1016/j.jcrysgro.2022.127056.
  85. T. Matsuoka, H. Morioka, S. Semboshi, Y. Okada, S. Kuboya, H. Okamoto, and T. Fukuda, “Properties of ScAlMgO4 as Substrate for Nitride Semiconductors”, Crystals, 13, Issue 3, article 449 pp.1-13 (2023); DOI: 10.3390/cryst13030449.

Ⅱ–Ⅵ Semiconductors

  1. T. Ohno, Y. Kawaguchi, A. Ohki, and T. Matsuoka, “ZnCdSe/ZnSe Quantum-Well Laser Diode on a (711)A GaAs Substrate”, Jpn. J. Appl. Phys., 33, Part 1, No. 10R, pp. 5766-5773 (1994); DOI: 10.1143/JJAP.33.5766.
  2. K. Iwata, H. Asahi, J. H. Kim, X. F. Liu, S. Gonda, Y. Kawaguchi, A. Ohki, and T. Matsuoka, “Gas Source Molecular Beam Epitaxy Growth of InAlP Band-Offset Reduction Layer on p-Type ZnSe”, J. Cryst. Growth, 150, Part 2, pp. 833-837 (1995); DOI: 10.1016/0022-0248(95)80056-I.
  3. T. Matsuoka, T. Ohno, and A. Ohki, “Effect of Tilted Substrates on p-Type Doping in ZnSe and ZnCdSe/ZnSe Quantum Wells”, Phys. Status Solidi B, 187, Issue 2, pp. 401-406 (1995); DOI: 10.1002/pssb.2221870219.
  4. K. Iwata, H. Asahi, T. Ogura, J. Sumino, S. Gonda, A. Ohki, Y. Kawaguchi,and T. Matsuoka, “Low Temperature Grown Be-Doped InAlP Band-Offset Reduction Layer to p-Type ZnSe”, J. Electron. Mater., 25, 4, pp. 637-641 (1996); DOI: 10.1007/BF02666516.
  5. T. Ohno, A. Ohki, and T. Matsuoka, “Investigation of Degradation in Homoepitaxially Grown ZnCdSe/ZnSe Light Emitting Diode”, Jpn. J. Appl. Phys., 36, No. 2B, pp. L190-L193 (1997); DOI: 10.1143/JJAP.36.L190.
  6. A. Ohki, T. Ohno, and T. Matsuoka, “Continuous-Wave Operation of ZnSe-Based Laser Diodes Homoepitaxially Grown on Semi-Insulation ZnSe Substrates”, Electron. Lett., 33, Issue 11, pp. 990-991 (1997); DOI: 10.1049/el:19970624.
  7. T. Ohno, A. Ohki, and T. Matsuoka, “Room-Temperature CW Operation of Ⅱ–Ⅵ Laser Grown on ZnSe Substrate Cleaned with Hydrogen Plasma”, J. Crystal Growth, 184/185, pp. 550-553 (1998); DOI: 10.1016/S0022-0248(98)80114-0.
  8. T. Ohno, A. Ohki, and T. Matsuoka, “Surface Cleaning with Hydrogen Plasma for Low-Defect-Density ZnSe Homoepitaxial Growth”, J. Vac. Sci. Technol. A., 16, 4, pp. 2539-2545 (1998); DOI: 10.1116/1.581378.

Others

  1. K. Nakashima and T. Matsuoka, “A Simple Method for Analyzing Peak Broadening due to Tilt and Twist Distributions in X-Ray Diffraction Measurements of Materials of Arbitrary Type”, J. Appl. Crystallogr., 41, part 1, pp. 191-197 (2008); DOI: 10.1107/S0021889807064011.
  2. D. Ehrentraut, G. K. L. Goh., K. Fujii, C. C. Ooi, L.H. Quang, T. Fukuda, M. Kano, Y. Zhang, and T .Matsuoka, “Homoepitaxy of ZnO and MgZnO Films at 90°C”, J. Solid State Chem., 214, pp. 96–100 (2014); DOI: 10.1016/j.jssc.2013.10.008.
  3. A. Ishibashi, T. Matsuoka, R. Enomoto, and M. Yasutake, “New Solar Cell and Clean Unit System Platform (CUSP) for Earth and Environmental Science”, IOP Conf. Ser: Earth Environ. Sci., 93, article 012081 pp. 1-7 (2017); DOI: 10.1088/1755-1315/93/1/012081.
  4. A. Ishibashi, N. Sawamura, T. Matsuoka, H. Kobayashi, and T. Kasai, “Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP3SC)”, Trans. Mater. Res. Soc. Jpn., 44, 5, pp. 187-191 (2019); DOI: 10.14723/tmrsj.44.187.