Matsuoka Lab.
New Industry Creation Hatchery Center
Takashi Matsuoka
Emeritus Professor of Tohoku University

Matsuoka Profile

Mastuoka Photo

Education

D.E. (Electronic Engineering)
1988 - Hokkaido University (Sapporo, Japan)
M.E. (Electronic Engineering)
1978 - Hokkaido University (Sapporo, Japan)
B.E. (Electronic Engineering)
1976 - Hokkaido University (Sapporo, Japan)

Job History

2019. 4 - Present
Emeritus Professor, Tohoku University (Sendai, Japan)
Specially Appointed Professor, New Industry Creation Hatchery Center, Tohoku University (Sendai, Japan)
2005. 2 - 2019. 3
Professor, the division of physics of electronic materials, Institute for Materials Research, Tohoku University (Sendai, Japan)
1997 - 2005. 1
NTT Basic Research Laboratories, Senior Research Engineer, Supervisor (Kanagawa Pref., Japan)
1980 - 1997
NTT Photonics Laboratories, Senior Research Engineer, Supervisor (Kanagawa Pref., Japan)
1978 - 1980
NTT Integrated Circuit Laboratories, Research Engineer (Tokyo, Japan)

Visiting Positions

  • Anna University (Chennai, India), Visiting Professor (2009. 9 - Present)
  • Hokkaido University (Sapporo, Japan), Advisor of Spin-Measurement Research in Core Research for Evolutional Science and Technology in the Japan Science and Technology Corporation (CREST) (1996-2001)
  • Hokkaido University (Sapporo, Japan), Lecturer (1989-1997)

Membership

  • Life Senior of Electrical and Electronics Engineers (IEEE)
  • Materials Research Society (MRS)
  • Society of Photo-Optical Instrumentation Engineers (SPIE)
  • Fellow of the Japan Society of Applied Physics (JSAP)
  • Institute of Electronics, Information and Communication Engineers of Japan (IEICE)
  • Japanese Association for Crystal Growth (JACG)

Awards

  1. ECOC Prize 1984 (the best paper of 10th European Conference on Optical Communication), Stuttgart Germany in 1984.
  2. President Award of Nippon Telegraph and Telephone (NTT) Corporation in 1988.
  3. Best Paper Award by Director of Basic Research Laboratories in Nippon Telegraph and Telephone (NTT) Corporation in 2003.
  4. Fellow Award of The Japan Society of Applied Physics (JSAP)in 2014, APEX/JJAP Editorial Contribution Award of JSAP in 2014.
  5. Achievement Award of The Japanese Association for Crystal Growth (JACG) in 2016.
  6. Award for Science and Technology of "The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology" in 2017.
  7. Electronics Society Award of The Institute of Electronics, Information and Communication Engineers (IEICE) in 2017.
  8. 67th Kahoku Cultural Award in 2018.
  9. Compound Semiconductor Electronics Achievement Award of JSAP in 2018.

Research Interests

  • Ⅲ–Nitrides (Metalorganic Vapor Phase Epitaxy (MOVPE), Mechanism of Crystal Growth, Miscibility of Materials, Optical Devices (LEDs, Lasers, Detectors), Electronic Devices)
  • Ⅱ–Ⅵ Compounds (Molecular Beam Epitaxy (MBE), Optical Devices)
  • Traditional Ⅲ–Ⅴ Compunds (In, Ga, Al, As, P) (Liquid Phase Epitaxy, MOVPE, MBE, Optical Devices)
  • Optical Device Physics (LEDs, Lasers, Detectors, Modulators, Amplifiers, Second Harmonic Generators)
  • Switching Device Physics (FETs, Bipolar Transistors)
  • Optical Communication Systems

Research Track Record

1978 — 1980 Si-Related

Research on fabrication of Si- MOSFETs on sapphire substrate (SOS), and multi-layer wiring in IC.

1980 — 1987 Distributed feedback (DFB) laser for optical communications systems

  • It is worthy of special mention that he succeeded in the first continuous operation (CW) operation of 1.55-µ:m-wavelength-region InGaAsP DFB lasers in the world in 1981.
  • He supplied many DFB lasers for transmission experiments to the researchers in system fields and DFB lasers were confirmed to be effective for high-performance communications systems.
  • He transferred the fabrication techniques to a couple of device makers.

This DFB lasers have been widely used for high-bit rate and long-haul optical communication systems all over the world. The DFB laser has made the bit rate 25000 times higher and the transmission distance one-order magnitude higher, in comparison with the traditional Fabry-Perrot laser. Recently, the transmission capacity per fiber has been reached to 10Tb/s. It is not too much to say that this DFB laser has supported the present advanced information society. He won 10th ECOC (European Conference on Optical Communication in 1984) award, which was the best paper award.

1987 — 1991. 10 / 1994. 3 — Present
Wide-gap semiconductors from materials to their device applications InGaAlN-Related Wide-Gap Semiconductor

  • Proposal of the InGaAlN system for brilliant light-emitting devices in 1986
  • First growth of single crystalline InGaN film in 1988
  • First photoluminescence of blue light from InGaN in 1992
  • First growth of single crystalline InN film and correction of its band-gap energy from about 2 eV to 0.8 eV in 2002
  • Epitaxial growth of nitride semiconductors under control of crystalline polarity in 2006
  • Red to blue color emission of nitrogen-polar InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy (MOVPE) in 2015
  • Fabrication of free-standing GaN wafer on ScAlMgO4 (SCAM) substrate with halide vapor phase epitaxy (HVPE) and its self-separation in 2017
  • Three-Dimensional observation of threading dislocations in GaN crystals by two-photonexcitation photoluminescence in 2018
  • Fabrication of inverted HEMT (high electron mobility transistor) in 2018.

As based on Matsuoka’s concept and technique mentioned above, light-emitting diodes (LEDs) and laser diodes (LDs) commercially available have been fabricated by using InGaAlN, and their lightemitting layer has been constructed with InGaN. By correcting the band-gap energy of InN, the application area of nitride semiconductors has been extended ultraviolet to infrared. The usage of an ScAlMgO4 substrate and self-separation of GaN grown on this substrate has shown the possibility of fabricating free-standing GaN wafers with high quality (SCAM) substrate. The nitrogen-polar growth of nitride semiconductors will lead to full color display due to all nitride semiconductors. In particular, the inverted HEMT fabricated with nitrogen-polar growth, which can be operated at high frequency, will open the window to realize 5G.

1991. 10 — 1994. 3 Ⅱ–Ⅵ Group Wide-Gap Semiconductors

  • Effect of tilted substrate for p-type doping and quantum well of ZnCdSe/ZnSe
  • Analysis of degradation mechanism in ZnCdSe/ZnSe light-emitting diode
  • First continuous-wave operation of ZnCdSe/ZnSe laser diode on semi-insulation ZnSe substrate
  • First room-temperature CW operation of II-VI laser diode formed on ZnSe substrate
  • Low-defect-density ZnSe homoepitaxial growth due to newly introduced surface cleaning with hydrogen-plasma

We investigated II-IV group semiconductors for realizing blue color laser diodes (LDs) formed on GaAs substrates. From our understanding the degradation mechanism of LDs, we introduced ZnSe substrate for reducing defects in crystals. Newly, we developed the method of its surface cleaning before the epitaxial growth. Finally, we succeeded in CW operation of ZnCdSe/ZnSe LDs at room temperature for the first time in the world. Regrettably, the device lifetime was too short to really use these LDs. Finally we gave up this research.

Scientific Articles

Published papers reviewed are more than 120. There are cited more than 3000 times. In particular, the citation numbers of DFB lasers and wide-gap semiconductor InGaAlN are 600 and 2500, respectively.

InGaAsP Related

  1. T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami,
    “CW Operation of DFB-BH GaInAsP/InP Lasers in 1.5µm Wavelength Region”,
    Electron. Lett., 18, 1, pp.27-28 (1982).
  2. T. Matsuoka, Y. Suzuki, Y. Noguchi, and H. Nagai,
    “GaInAsP/InP DH Laser on Semi-Insulating InP Substrate with Terrace Structure”,
    Electron. Lett., 18, 9, pp.359-361 (1982).
  3. T. Matsuoka, H. Nagai, Y. Noguchi, Y. Suzuki, and K. Kawaguchi,
    “Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties”,
    Jpn. J. Appl. Phys., 23, 3, pp.L138-L140 (1984).
  4. T. Matsuoka, H. Nagai, Y. Suzuki, Y. Noguchi, and K. Wakita,
    “Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet”,
    Jpn. J. Appl. Phys., 23, 10, pp.L782-L784 (1984).
  5. T. Matsuoka, Y. Yoshikuni, and G. Motosugi,
    “Dependence of Single-Longitudinal-Mode Probability on DFB Laser Facet Structure”,
    Electron. Lett., 21, 24, pp.1151-1152 (1985).
  6. T. Matsuoka, H. Nagai, and Y. Yoshikuni,
    “Verification of the Light Phase Effect at the Facet on DFB Laser Properties”,
    IEEE J. Quantum Electron., QE-21, 12, pp.1880-1886 (1985).
  7. T. Matsuoka,
    “Temperature Range for DFB Mode Oscillation in 1.5 µm InGaAsP/InP DFB Lasers”,
    Jpn. J. Appl. Phys., 25, 8, pp.1206-1210 (1986).
  8. T. Matsuoka and H. Nagai,
    “InP Etchant for Submicron Patterns”,
    J. Electrochem. Soc., 133, 12, pp.2485-2491 (1986).

Wide-Gap Semiconductor InGaAlN Related

  1. T. Matsuoka, H. Tanaka, T. Sasaki, and K. Katsui,
    “Wide-Gap Semiconductor (In, Ga)N”,
    in Inst. Phys. Conf. Ser., 106, pp.141-146 (1990).
  2. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui,
    “Photoluminescence of InGaN Films Grown at High Temperature by MOVPE”,
    Appl. Phys. Lett., 59, 18, pp.2251-2253 (1991).
  3. T. Matsuoka, N. Yoshimoto, T. Sasaki, and K. Katsu,
    “Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE”,
    J. Electronic Mat., 21, 2, pp.157-163 (1991).
  4. H. Tanaka, F. Shimokawa, T. Sasaki, and T. Matsuoka,
    “Reactive Fast Atom Beam Etching of a Wide-Gap Semiconductor GaN”,
    J. Optoelectronics, 6, 1, pp.150-153 (1991).
  5. T. Matsuoka,
    “Current Status of GaN and Compounds as Wide-Gap Semiconductor”,
    J. Crystal Growth, 124, pp.433-438 (1992).
  6. T. Matsuoka, A. Ohki, T. Ohno, and Y. Kawaguchi,
    “Comparison of GaN- and ZnSe-Based Materials for Light Emitters”,
    J. Cryst. Growth, 138, pp.727-736 (1994).
  7. <Invited Paper>
    T. Matsuoka,
    “Recent Progress of InGaAlN and II-VI Systems for Blue-Green Light Emitting Devices”,
    Adv. Mater., 8, 6, pp.469-479 (1996).
  8. T. Matsuoka,
    “Lattice-Matching Growth of InGaAlN Systems”,
    in Proc. Fall Meeting of Material Research Symp., 395, pp.39-50 (1996).
  9. T. Matsuoka,
    “Calculation of Unstable Mixing Region in Wurtzite In1-X-YGaXAlYN”,
    Appl. Phys. Lett., 71, 1, pp.105-106 (1997).
  10. T. Matsuoka,
    “Phase Separation in Wurtzite In1-X-YGaXAlYN”,
    MRS Internet J. Nitride Semicond. Res., 3, 54 (1998).
  11. T. Matsuoka and T. Ishii,
    “Polarity of GaN Grown on (001) β-LiGaO2”,
    in Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp. 11-14 (2000).
  12. <Invited Paper>
    T. Matsuoka, T. Itoh, and T. Kainoh,
    “First Plastic Optical Fiber Transmission Experiment using Blue-Green LEDs with IntensityModulation/Direct Detection”,
    Electron. Lett., 36, 22, pp. 1836-1837 (2000).
  13. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto,
    “Optical Band-Gap Energy of Wurtzite InN”,
    Appl. Phys. Lett., 81, 7, pp.1246-1248 (2002).
  14. T. Mitate, H. Takahata, S. Mizuno, T. Matsuoka, and N. Kuwano,
    “Polarity Determination of Indium Nitride by CBED Method”,
    Appl. Phys. Lett., 86, pp.134103-3 (2005).
  15. T. Matsuoka, T. Mitate, H. Takahata, S. Mizuno, Y. Uchiyama, A. Sasaki, M. Yoshimoto, T. Ohnishi, and M. Sumiya,
    “N-Polarity GaN on Sapphire Substrate Grown by MOVPE”,
    Phys. Stat. Sol. (b), 243, 7, pp.1446-1450 (2006).
  16. T. Matsuoka, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, and R. Katayama,
    “Paving the Way to High-Quality Indium Nitride -The Effects of Pressurized Reactor -”,
    Proc. SPIE, 7945, pp. 794519-1 – 794519-5 (2011). (Invited)
  17. K. Shojiki, T. Tanikawa, J. H. Choi, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka,
    “Red to Blue Wavelength Emission of N-Polar (0001) InGaN Light-Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy”,
    Appl. Phys. Express, 8, 6, pp. 061005-1 - 061005-4 (2015).
  18. K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka,
    “Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers”,
    Appl. Phys. Express, 10, pp. 101001-1-4 (2017).
  19. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka,
    “N-polar GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching”,
    Appl. Phys. Express, 11, 1, pp. 015503-1-015503-4 (2018).
  20. T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka,
    “Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photonexcitation Photoluminescence”,
    Appl. Phys. Express, 11, pp. 031004-1-031004-4 (2018).

Wide-Gap Semiconductor Ⅱ–Ⅵ Related

  1. T. Matsuoka, T. Ohno, and A. Ohki,
    “The Effect of Tilted Substrates for p-Type Doping and Quantum Wells of ZnCdSe/ZnSe”,
    Phys. Stat. Sol. (b), 187, 2, pp.401-406 (1995).
  2. T. Ohno, A. Ohki, and T. Matsuoka,
    “Investigation of Degradation in Homoepitaxially Grown ZnCdSe/ZnSe Light Emitting Diode”,
    Jpn. J. Appl. Phys., 36, 2B, pp.L190-L193 (1997).
  3. A. Ohki, T. Ohno, and T. Matsuoka,
    “Continuous-Wave Operation of ZnSe-Based Laser Diodes Homoepitaxially Grown on Semi-Insulation ZnSe Substrates”,
    Electron. Lett., 33, 11, pp.990-991 (1997).
  4. T. Ohno, A. Ohki, and T. Matsuoka,
    “Room-Temperature CW Operation of II-VI Laser Grown on ZnSe Substrate Cleaned with Hydrogen Plasma”,
    J. Cryst. Growth, 184/185, pp.550-553 (1998)
  5. T. Ohno, A. Ohki, and T. Matsuoka,
    “Surface Cleaning with Hydrogen Plasma for Low-Defect-Density ZnSe Homoepitaxial Growth”,
    J. Vac. Sci. Technol. B., 16, 4, pp.2539-2545 (1998).

Presentation in International Conference

The number of presentations in international conferences are 245 time including invited talks more than 100.

Patents

The total number of patents are near 50. The international patents are listed up below.

  1. T. Matsuoka and T. Sasaki, “Epitaxial Wurtzite growth structure for semiconductor lightemitting device”,
    US 5,006,908 (1990. 2. 12).
  2. T. Matsuoka, T. Sasaki, “Epitaxial-growth Structure for a Semiconductor Light-Emitting Device, and Semiconductor Light-Emitting Device Using the Same”,
    EP0383215 (1994. 1. 6).
  3. T. Matsuoka, “Sapphire Substrates, Semiconductor Device, Electronic Component, and Crystal growing Method”,
    US 6586819 (2003. 7. 1).
  4. T. Matsuoka, “Sapphire Substrates, Semiconductor Device, Electronic Component, and Crystal growing Method”,
    EPC 90102634.4 (2001. 8. 10).
  5. T. Matsuoka and H. Okamoto, “Semiconductor Light-Emitting Device for Optical Communications”,
    US Patent 6927426 B2 (2005. 8. 9).
  6. T. Matsuoka and H. Okamoto, “Semiconductor Light-Emitting Device”,
    EP Patent 1389814 (2007. 7. 12).
  7. T. Matsuoka and H. Okamoto, “Semiconductor Light-Emitting Device”,
    0568701 (2006. 3. 3).
  8. T. Matsuoka and H. Okamoto, “Semiconductor Light-emitting Device”,
    Patent ZL03107531.2 (2002. 3. 26).
  9. T. Matsuoka and H. Fukano, “Semiconductor Light Modulator and Semiconductor Laser Diode with Semiconductor Light Modulator”,
    US Patent 7039078B2 (2006. 5. 2).
  10. T. Matsuoka and H. Fukano, “Semiconductor Light Modulator and Semiconductor Laser Diode with Semiconductor Light Modulator”,
    EP1400835B1 (2011. 11. 16).
  11. T. Matsuoka and H. Fukano, “Semiconductor Light Modulator and Semiconductor Laser Diode with Semiconductor Light Modulator”,
    Patent ZL03158879.4 (2003. 9. 16).
  12. T. Matsuoka, T. Fukuda, and T. Tanikawa, “Method of Producing Self-Supporting Nitride Semiconductor Substrate”,
    US Patent 10,141,1848B2 (2018. 11. 27).

Books

  1. T. Matsuoka, “Semiconductor Applications” in Intermetallic Compounds : Principles and Practice, Vol. 2, J. H. Westbrook and R. L. Fleischer Eds. (John Wiley and Sons, N. Y. 1995). Chapter 15
  2. T. Matsuoka, “Photoluminescence of InN and InGaN” in Properties of III-V Nitrides, J. H. Edgar Ed. (IEE, London, 1995). Section 7.3
  3. T. Matsuoka, “Ternary Alloys” in Optoelectronic Properties of Semiconductors and Superlattices, Vol. 2, "GaN and Related Materials", S. J. Pearton Ed., (Gordon and Breach Science Publisher, New York, 1997). Chapter 4
  4. T. Matsuoka, “Visible, Blue and Ultraviolet Light Sources” in New Edition Handbook of Optical Materials, T. Hukumi, K. Kubodera, and K. Horia Eds. (Realize Co. Ltd., Tokyo, 2000). Chapter 2.1.5
  5. T. Matsuoka, “Recent Research Developments in Electronic Materials” in MOVPE Growth of Characteristics of Nitride Semiconductors from GaN to InN, Q. Guo Ed. (Research Signpost, 2004). Chapter 1
  6. Author and Editor, “Let's Find the Future”, Responsible Editor Y. Tokura (Diamond, Tokyo, 2005).
  7. Editor, “Epitaxial Growth of III-Nitride Compounds ˜Computational Approach˜”, Book Series: Springer Series in Materials Science, Vol. 269, Editors: T. Matsuoka and Y. Kangawa, ISBN 978-3-319-76641-6, number of page 223 (Springer, Germany, 2018).