Crystal Growth
Nitride Semiconductors
- Metalorganic Vapor Phase Epitaxy (MOVPE)
- Growth System Design
- Utilities Operation
- Gas Purifier
- Exhaust Gas Treatment Equipment
- Crystal Growth Process
InP and Related Conpounds
- Liquid Phase Epitaxy(LPE)
- System Design
- Utilities Operation
- Crystal Growth
- MOVPE
- System Design
- Utilities Operation
- Crystal Growth
Ⅱ–Ⅵ Conpounds (ZnSe system)
- Molecular Beam Epitaxy
- System Design
- Operation
- Crystal Growth
Material Evaluation
- X-ray Diffractmetry
- High Resolution X-ray Diffraction(HR-XRD)
- ex. 2θ-ω, Rocking Curve, Reciprocal Space Mapping(scan: 2θ x ω), Pole figure(scan: φ x χ/fixed: 2θ-θ), Thin Film Analysis(XRR or Long-Range 2θ-ω scan)
- Optical Transition
- Photo-Luminescence(PL), Spectrophotometer(IR-Absorption/Photo Reflectance)
- Electrical Measurements
- Hall effect, I-V, CV
Devices
Design, Fabrication Process, and Characteristics Measurement
- Optical Devices
- Light Emitteing Diode(LED; GaN, InP, ZnSe system), Superluminescent Diode(SLD, InGaAsP/InP), Laser Diode(LD; InP, ZnSe system), DFB Laser Diode(DFB-LD; InGaAsP/InP), Solar Cell(InP system), Fabrication of Diffraction Grating
- Electronic Devices
- pn Junction Diode (PND), Bipolar Transistor(BJT), Scottkey Barrier Diode(SBD), MOS-FET, High Electron Mobility Transistor(HEMT)
Others
The following items are also included
- Grow up of researcher's mind
- Planning of Research
- Writing of Papers and Reports