Matsuoka Lab.
New Industry Creation Hatchery Center
Takashi Matsuoka
Emeritus Professor of Tohoku University

Awards

Personal Achievements

  1. Takashi Matsuoka, Haruo Nagai, Yuzo Yoshikuni and Koich Kuroiwa, ECOC Prize 1984 (the best paper of 10th European Conference on Optical Communication), Stuttgart Germany in 1984, “Verification of the Light Phase Effect at the Facet on DFB Laser Properties”.
  2. President Award of Nippon Telegraph and Telephone (NTT) Corporation in 1988, “Development of High-Bit-Rate and Long-Haul Optical Fiber Transmission System”.
  3. Best Paper Award by Director of Basic Research Laboratories in Nippon Telegraph and Telephone (NTT) Corporation in 2003, “Optical Band-Gap Energy of Wurtzite InN”, Appl. Phys. Lett., 81, 1246 (2002).
  4. Fellow Award of The Japan Society of Applied Physics (JSAP) in 2014, APEX/JJAP Editorial Contribution Award of JSAP in 2014, “Development of Semiconductor Optical Devices by Long-Wavelength-Region DFB-LD and Nitride Semiconductors”.
  5. Achievement Award of The Japanese Association for Crystal Growth (JACG) in 2016, “Development of Pioneering Crystal-Growth-Technology for Optical Fiber Communications and Blue-Light Emitting Devices”.
  6. Award for Science and Technology of "The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology" in 2017, “Development of New Semiconductor Material and Research on its Device Application”.
  7. Electronics Society Award of "Department of Optical Semiconductors and Photonics" of The Institute of Electronics, Information and Communication Engineers (IEICE) in 2017, “Contribution to Electronics by Development of Long-Wavelength-Region Distributed Feedback Laser and Elucidation of Basic Properties of Nitride Semiconductors”.
  8. 67th Kahoku Cultural Award in 2018, "Contribution to the Development of Electronics by Semiconductor Materials from Infrared to Blue and their Device Applications".
  9. Compound Semiconductor Electronics Achievement Award of JSAP in 2018, "Pioneer Research on Epitaxial Growth of Compound Semiconductor".

Students and Staffs

  1. Kanako Shojiki (BC 4), Tohoku University President Award in March 25, 2011.
  2. Tomoyuki Tanikawa, Kanako Shojiki (MC 2), Jung-Hun Choi (DC 1), Ryuji Katayama, and Takashi Matsuoka, 17th Young Scientist Presentation Award of Tohoku Branch of The Japan Society of Applied Physics in Dec. 6, 2012, “Surface Morphology and Indium Incorporation of InGaN MOVPE-Grown on (0001) and (0001) GaN Substrates”.
  3. Kanako Shojiki (DC 1), Jung-Hun Choi (DC 3), Takashi Hanada, Tomoyuki Tanikawa, Ryuji Katayama, and Takashi Matsuoka, Poster Award of 74th Fall Meeting of The Japan Society of Applied Physics in Sept. 17, 2013, “Observation of Indium-Content Distribution of m-Plane InGaN Thin Film with Hillocks”.
  4. Tomoyuki Tanikawa, Kanako Shojiki (DC 1),Takashi Aisaka (MC 1), Takeshi Kimura, Shigeyuki Kuboya, Ryuji Katayama, and Takashi Matsuoka, Poster Award of 126th Meeting of Institute for Materials Research in Nov. 28, 2013, “Promotion of Surface Migration during MOVPE Growth of (0001) GaN on Sapphire Substrate with Mg”.
  5. Kanako Shojiki (DC 1),Jung-Hun Choi (DC 3),Takashi Hanada, Tomoyuki Tanikawa, Ryuji Katayama, and Takashi Matsuoka, Poster Presentation Award of 2013 Annual Meeting of Excellent Graduate Schools for "Materials Integration Center" and "Materials Science Center" in Mar. 10, 2014, “Observation of Indium Content Distribution on m-Plane InGaN Film with Hillocks ”.
  6. Nobuo Yoshinokawa (MC 2), Takashi Aisaka (MC 2), Takeshi Kimura, Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka, and Hiroyuki Fukuyama, Poster Award of 127th Meeting of Institute for Materials Research in May 28, 2014, “MOVPE Growth of N-Polar GaN on Nitrided Sapphire Substrate”.
  7. Kanako Shojiki (DC 2), Jung-Hun Choi (DC 3), Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka, 37th Young Scientist Presentation Award of The Japan Society of Applied Physics in Nov. 26, 2014, “Fabrication of Red, Green and Blue Light-Emitting Diodes by using N-Polar InGaN MOVPE Grown on Sapphire Substrate”.
  8. Takashi Aisaka (MC 2), Tomoyuki Tanikawa, Takeshi Kimura, Kanako Shojiki (DC 2), Shigeyuki Kuboya, Ryuji Katayama, and Takashi Matsuoka, Poster Award of 128th Meeting of Institute for Materials Research in Nov. 27, 2014, “Selective Growth of N-Polar GaN with MOVPE for Reduction of Dislocation Density”.
  9. Kanako Shojiki (DC 2), Jung-Hun Choi (DC 3), Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka, Poster Award of 128th Meeting of Institute for Materials Research in Nov. 27, 2014, “Realization of Light-Emitting-Diode over All the Visible Region with MOVPE-Grown N-Polar InGaN”.
  10. Kanako Shojiki (DC 2), Jung-Hun Choi (DC 3), Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka, 19th Young Scientist Presentation Award of Tohoku Branch of The Japan Society of Applied Physics in Dec. 5, 2014, “Fabrication of Light-Emitting-Diode over All the Visible Wavelength Region with MOVPEGrown N-Polar InGaN”.
  11. Ryohei Nonoda (MC 1), Kanako Shojiki (DC 3), Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, and Takashi Matsuoka, 20th Young Scientist Presentation Award of Tohoku Branch of The Japan Society of Applied Physics in Jan. 23, 2016, “Influence of Hole Density on Source Supply Ratio of Mg/Ga and V/III in MOVPE Growth of N-Polar p-type GaN”.
  12. Kanako Shojiki (DC 3), 6th JSPS (Japan Society for the Promotion of Science) IKUSHI Prize in Mar. 2, 2016, “Metalorganic-Vapor-Phase Epitaxial Growth of –c Polar InGaN and its Optical Device Applications”.
  13. Tomoyuki Tanikawa, Shizuto Kawasihma (MC 1), Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, and Takashi Matsuoka, 7th Thin Film Solar Cell Seminar Poster Presentation Award in in March 14, 2016, “Crystallographic Polarization of InGaN/GaN Solar Cells vs. Characteristics of Electrical Power Generation”.
  14. Jinyeop Yoo (DC 3), Kanako Shojiki, Kanako Shojiki (DC 3), Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, and Takashi Matsuoka, Annual Meeting of Excellent Graduate Schools for "Materials Integration Center" and "Materials Science Center" Poster Presentation Award in March 18, 2016, “Polarity Control of GaN Grown on Pulsed-Laser-Deposited AlN/GaN Template by Metal-Organic Vapor Phase Epitaxy”.
  15. Kanako Shojiki, Tohoku University President Excellent Award for Student in March 25, 2016.
  16. Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, and Takashi Matsuoka, 40th Young Scientist Presentation Award of The Japan Society of Applied Physics in Sept. 17, 2017, “Three-Dimensional Evaluation of Threading Dislocation in GaN by Two-Photon Excitation Photoluminescence”.
  17. Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, and Takashi Matsuoka, 41th Best Paper Award of The Japan Society of Applied Physics in September, 2019, “Three-Dimensional Imaging of Threading Dislocations in GaN Crystals using Two-Photon Excitation Photoluminescence”, Appl. Phys. Express, 11, 041003 (2018).
  18. Tetsuya Suemitsu, Kiattiwut Prasertsuk, and Takashi Matsuoka, Best Presentation Award in ISPlasma 2021/IC-PLANTS 2021 (13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 14th International Conference pn Plasma-Nano Technology & Science) in Mar. 10, 2021, “Evidence of Carrier Trapping at Extrinsic Gate Region in N-Polar GaN/AlGaN MIS HEMTs”.