Research Collaboration

National Government and Public Institute

1. Core Research for Evolutionary Science and Technology Project (CREST) of Japan Science and Technology Agency (JST)

   Project No.:

   JPMJCR9538

   Theme:

   "Spin Measurement"

   Principal Researcher:

   Prof. Kouichi Mukasa of Faculty of Engineering, Hokkaido University

   My Role:

   Research Advisor

   Period:

   Apr. 1, 1997 – Mar. 31, 2001

   Budget:

   800 M JPY

2. Grant-in-Aid for Scientific Research B of Japan Society for the Promotion of Science (JSPS)

   Issue No.:

   16360008

   Theme:

   "Analysis of Degradation Mechanism in Light-Emitting Devices of Ⅱ-Ⅵ and Ⅲ-Ⅴ Wide-Gap Semiconductors and its Control"

   Principal Researcher:

   Prof. Koshi Ando of Tottori University

   My Role:

   Collaboration Researcher

   Period:

   Apr.1, 2004 – Mar. 31, 2007

   Budget:

   11.3 million JPY

3. Core Research for Evolutionary Science and Technology Project (CREST) of Japan Science and Technology Agency (JST)

   Specific Research Investigation

   "Nano Light-Emitting-Materials Research and their Device Fabrication"

   My Role:

   Principal Researcher

   Period:

   Oct. 1, 2005 – Mar. 31, 2006

   Budget:

   5 millon JPY

4. Grant-in-Aid for Research on Creation of Functional Nanomaterials in Institute for Materials Research (IMR), Tohoku University

   Theme:

   "Nano Light-Emitting-Materials Research and their Device Fabrication"

   My Role:

   Principal Researcher

   Period:

   Apr. 1, 2006 – Mar. 31, 2008

   Budget:

   10 million JPY

5. Core Research for Evolutionary Science and Technology Project (CREST) of Research Area "Photonics and Quantum Optics for the Creation of Innovative Functions&quat;, Japan Science and Technology Agency (JST)

   Project No.

   JPMJCR06J4

   Theme:

   "Research on InN Semiconductor Lasers with High Temperature-Stability for Optical Communications Systems"

   My Role:

   Principal Researcher

   Period:

   Oct. 1, 2006 – Mar. 31, 2012

   Budget:

   410.46 million JPY

6. Grant-in-Aid for Research of Iwate Industrial Research Institute

   Theme:

   "Research on Fabrication of Nitride Thin Films with MOVPE and their Evaluation"

   My Role:

   Principal Researcher

   Period:

   Jan. 1, 2006 – Mar. 31, 2006

   Budget:

   1.0 million JPY

7. Grant-in-Aid for Commercialization-Feasibility Test of Research Plaza Miyagi, Japan Science and Technology Agency (JST)

   Theme:

   "Establishment of Thin Film Fabrication Technology of High Quality InGaN Lattice-Matching to ZnO Substrate for Blue-Emitter"

   Project No.

   JST-PROJECT-7700009413

   My Role:

   Principal Researcher

   Period:

   Oct. 1, 2006 – Feb. 28, 2007

   Budget:

   2.0 million JPY

8. 2009 Developmental Scientific Research A on Seeds Discover, Japan Science and Technology Agency (JST)

   Project No.

   JST-PROJECT-09157817

   Theme:

   "Development of "Elemental Technology" for Nitride-Semiconductor Solar Cells with Super High Efficiency"

   Principal Researcher:

   Assistant Professor Yuhuai Liu of Institute for Materials Research (IMR), Tohoku University

   My Role:

   Advisor

   Period:

   Apr. 1, 2009 – Mar. 31, 2010

   Budget:

   2.0 million JPY

9. 2009 Developmental Scientific Research B (Expansion) on Seeds Discover, Japan Science and Technology Agency (JST)

   Project No.

   JST-PROJECT-09157896

   Theme:

   "Establishment of High-Temperature Growth Technique of Green-Light-Emitting InGaN on ZNO Substrate with MOVPE"

   My Role:

   Principal Researcher

   Period:

   平成 21 年 4 月 1 日 — 22 年 3 月 31 日

   Budget:

   5.0 million JPY

10. Core Research for Evolutionary Science and Technology Project (CREST) of Research Area "Creative Research for Clean Energy Generation using Solar Energy", Japan Science and Technology Agency (JST)

    Project No.

    JPMJCR09Q6

    Theme:

    "High Efficiency Thin Film Solar Cells with Enhanced Optical Absorption by Excitons"

    Principal Researcher:

    Prof. Yoshiji Horikoshi of School of Advanced Science and Engineering, Waseda University

    My Role:

    Vice Principal Researcher

    Period:

    Oct. 1, 2006 – Mar. 31, 2015

    Budget:

    242.79 million JPY

11. Grant-in-Aid for Scientific Research C of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    23560356

    Theme:

    "Development of Red-Light-Emitting Layer Consisted of Nitride Semiconductor for Monolithic White Light Source"

    Principal Researcher:

    Assistant Professor Yuhuai Liu of Institute for Materials Research (IMR), Tohoku University

    My Role:

    Advisor

    Period:

    Apr.1, 2011 – Mar. 31, 2013

    Budget:

    4.1 millon JPY

12. Adaptable and Seamless Technology Transfer Program through Target Driven R&D (A-Step), Feasibility Study Stage: Investigation-Type of Japan Science and Technology Agency (JST)

    Project No.

    JST-PROJECT-1110454

    Theme:

    "Research and Development of "Elemental Technology" for Nitride-Semiconductor Solar Cells with Super High Efficiency on Si Substrate"

    My Role:

    Principal Researcher

    Period:

    Dec. 1, 2011 – July 31, 2012

    Budget:

    1.7 million JPY (4.98 百万円)

13. Grant-in-Aid for Scientific Research C of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    24560362

    Theme:

    "Development of Red-Light-Emitting Layer for Realizing White Light Source Consisted of Only Nitride Semiconductors"

    My Role:

    Principal Researcher

    Period:

    Apr.1, 2012 – Mar. 31, 2015

    Budget:

    4.98 million JPY (2.99 百万円)

14. Reconstruction Promotion Program A-STEP, Investigation-Type of Japan Science and Technology Agency (JST)

    Project No.

    JST-PROJECT-12101475

    Theme:

    "Research on Quality Improvement of Epitaxially Grown GaN by Introducing Lattice-Matching ScAlMgO₄ Substrate"

    My Role:

    Principal Researcher

    Period:

    Oct. 1, 2012 &ndassh; Sept. 30, 2013

    Budget:

    2.99 millon JPY

15. Adaptable and Seamless Technology Transfer Program through Target Driven R&D (A-Step), Feasibility Study Stage: Investigation-Type of Japan Science and Technology Agency (JST)

    Theme:

    "Practical Research on Epitaxial Growth of Indium-Rich InAlN for Device Applications of Nitride Semiconductors"

    My Role:

    Principal Researcher

    Period:

    Aug. 1, 2013 – Mar. 31, 2014

    Budget:

    1.7 million JPY

16. 2014 Research Program on Creation of Base Materials for Realization of Low-Carbon Society of Institute for Materials Research (IMR), Tohoku University

    Theme:

    "Application of N-Polar InAlN Compound Semiconductors Grown with Low- and High-Pressure Metalorganic Vapor Phase Epitaxial Growth for High-Efficient Opt-Electronic Devices"

    Principal Researcher:

    Assist. Prof. Shigeyuki Kuboya of Institute for Materials Research (IMR), Tohoku University

    My Role:

    Advisor

    Period:

    Apr. 1, 2014 – Mar. 31, 2016

    Budget:

    4.0 million JPY

17. Grant-in-Aid for Challenging Exploratory Research of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    15K13963

    Theme:

    "Research on Fabrication Process of Vertical-Type Transistors consisted of Nitride Semiconductors on ScAlMgO₄ substrate"

    Principal Researcher:

    Prof. Tetsuya Suemitsu of Research Institute of Electrical Communications (RIEC), Tohoku University

    My Role:

    Collaboration Researcher

    Period:

    Apr.1, 2015 – Mar. 31, 2017

    Budget:

    3.9 millon JPY

18. 2015 Contributing to Society by Accelerating Innovation and Achieving Results in a Timely Manner of New Energy and Industrial Technology Development Organization (NEDO)

    Theme:

    "Development of GaN-Based Substrate for LED with High Efficiency and Low Cost"
    Type E/ Practical Development Phase"

    Principal Research Company:

    Panasonic Corporation

    My Role:

    Collaboration Researcher

    Period:

    Aug. 1, 2015 – Mar. 31, 2018

    Budget:

    ：405 million JPY

19. Grant-in-Aid for Scientific Research B of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    16H04341

    Theme:

    Growth Technique of Structure Generating Two-Dimensional Electron Gas by Nitride Semiconductors

    Principal Researcher:

    東北大学 電気通信研究所 末光 哲也

    My Role:

    分担者

    Period:

    Apr.1, 2016 – Mar. 31, 2018

    Budget:

    16.25 million JPY(12.8 百万円)

20. Grant-in-Aid for Scientific Research B of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    16H04221

    Theme:

    Asymmetric-Waveguide-Coupled Multi-Striped Orthogonal Photo-Photocarrier-Propagation Solar Cell

    Principal Researcher:

    Prof. Akira Ishibashi of Research Institute for Electronic Science (RIES), Hokkaido University

    My Role:

    Co-Investigator

    Period:

    Apr.1, 2016 – Mar. 31, 2019

    Budget:

    16.12 million JPY

21. Grant-in-Aid for Scientific Research B of Japan Society for the Promotion of Science (JSPS)

    Issue No.

    16H03857

    Theme:

    "Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas"

    My Role:

    Principal Researcher

    Period:

    Apr.1, 2016 – Mar. 31, 2019

    Budget:

    12.5 million JPY(16.25 百万円)

22. Outsourcing Research of Tohoku University

    Theme:

    "Research on Fabrication of Free-Standing GaN Wafer with Threading Dislocation less than 10⁵/cm² with HVPE Growth"

    Principal Researcher:

    Małgorzata Iwińska of Institute of High Pressure Physics (Unipress), Polish Academy of Science

    My Role:

    Collaborate Researcher and Advisor

    Period:

    Oct. 1, 2022 – Mar. 31, 2024

Private Companies

Engineering Guidance

Company H

Apr. 1, 2020 6ndash; Mar. 31, 2022

Company I

Jul. 1, 2021 – Jun. 30, 2022