東北大学 未来科学技術共同研究センター
教 授
松岡 隆志

論 文 リスト

光通信波長帯レーザーダイオード

主に分布帰還型半導体レーザー(DFB-LD)をはじめとする光通信波長帯レーザーの分野

  1. T. Matsuoka, K. Takahei, Y. Noguchi, and H. Nagai, “1.5 µm Region InP/GaInAsP Buried Heterostructure Lasers on Semi-Insulating Substrate”, Electron. Lett., 17, Issue 1, pp. 12-14 (1981); DOI: 10.1049/el:19810010.
  2. T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, and T. Ikegami, “CW Operation of DFBBH GaInAsP/InP Lasers in 1.5 µm Wavelength Region”, Electron. Lett., 18, Issue 1, pp. 27-28 (1982); DOI: 10.1049/el:19820020.
  3. T. Matsuoka, Y. Suzuki, Y. Noguchi, and H. Nagai, “GaInAsP/InP DH Laser on Semi-Insulating InP Substrate with Terrace Structure”, Electron. Lett., 18, Issue 9, pp. 359-361 (1982); DOI: 10.1049/el:19820246.
  4. K. Iwashita, K. Nakagawa, T. Matsuoka, and M. Nakahara, “400Mbit/s Transmission Test using a 1.53 µm DFB Laser Diode and 104 km Single-Mode Fibre”, Electron. Lett., 18, Issue 22, pp. 937-938 (1982); DOI: 10.1049/el:19820643.
  5. Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, and T. Ikegami, “New 1.5 µm Wavelength GaInAsP/InP Distributed Feedback Laser”, Electron. Lett., 18, 23, pp. 1006-1008 (1982); DOI: 10.1049/el:19820689.
  6. H. Nagai, Y. Noguchi, T. Matsuoka, and Y. Suzuki, “Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers”, Jpn. J. Appl. Phys., 22, No. 5A, pp. L291-L293 (1983); DOI: 10.1143/JJAP.22.L291.
  7. H. Asahi, Y. Kawamura, Y. Noguchi, T. Matsuoka, and H. Nagai, “Hybrid LPE/MBE Grown InGaAsP/InP DFB Lasers”, Electron. Lett., 19, Issue 14, pp. 507-509 (1983); DOI: 10.1049/el:19830345.
  8. M. Kitamura, M. Seki, M. Yamaguchi, I. Mito, Ke. Kobayashi, Ko. Kobayashi, and T. Matsuoka, “High-Power Single-Longitudinal-Mode Operation of 1.3 µm DFB-DC-PBH-LD”, Electron. Lett., 19, Issue 20, pp. 840-841 (1983); DOI: 10.1049/el:19830572.
  9. Y. Itaya, T. Matsuoka, K. Kuroiwa, and T. Ikegami, “Longitudinal Mode Behaviors of 1.5 µm Range InGaAsP/InP Distributed Feedback Lasers”, IEEE J. Quantum Electron., QE-20, 3, pp. 230-235 (1984); DOI: 10.1109/JQE.1984.1072378.
  10. T. Matsuoka, H. Nagai, Y. Noguchi, Y. Suzuki, and Y. Kawaguchi, “Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties”, Jpn. J. Appl. Phys., 23, No. 3A, pp. L138-L140 (1984); DOI: 10.1143/JJAP.23.L138.
  11. Y. Noguchi, Y. Suzuki, Y. Matsuoka, and H. Nagai, “InP/InGaAsP p-Type Substrate and Mass Transported Doubly Buried Heterostructure Laser”, Electron. Lett., 20, Issue 19, pp. 769-771 (1984); DOI: 10.1049/el:19840524.
  12. T. Matsuoka, H. Nagai, Y. Suzuki, Y. Noguchi, and K. Wakita, “Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet”, Jpn. J. Appl. Phys., 23, 10, pp. L782-L784 (1984); DOI: 10.1143/JJAP.23.L782.
  13. Y. Suzuki, H. Nagai, Y. Noguchi, T. Matsuoka, and K. Kurumada, “High-Power SLM Operation 1.5 µm InP/InGaAsP DFB LD with Doubly Buried Heterostructure on p-Type InP Substrate”, Electron. Lett., 20, Issue 21, pp. 881-882 (1984); DOI: 10.1049/el:19840598.
  14. Y. Yoshikuni, T. Matsuoka, N. Yamanaka, and G. Motosugi, “Fine Structures in the Broadened Line of Distributed Feedback Lasers under High-Speed Direct Modulation”, Appl. Phys. Lett., 45, Issue 8, pp. 820-823 (1984); DOI: 10.1063/1.95430.
  15. 岩下 克､中川 清司､松岡 隆志, “単一縦モ−ド半導体レーザを用いた高速光ファイバ伝送系の符号誤り率特性”, 電子通信学会, J67-B, 12, pp. 1415-1422 (1984).
  16. H. Nagai, Y. Noguchi, and T. Matsuoka, “Thermal Deformation of Surface Corrugation on InGaAsP Crystals”, J. Crystal Growth, 71, Issue 1, pp. 225-231 (1985); DOI: 10.1016/0022-0248(85)90066-1.
  17. T. Matsuoka, Y. Yoshikuni, and G. Motosugi, “Dependence of Single-Longitudinal-Mode Probability on DFB Laser Facet Structure”, Electron. Lett., 21, Issue 24, pp. 1151-1152 (1985); DOI: 10.1049/el:19850814.
  18. H. Kawaguchi, K. Inoue, T. Matsuoka, and K. Otsuka, “Bistable Output Characteristics in Semiconductor Laser Injection Locking”, IEEE J. Quantum Electron., QE-21, 9, pp. 1314-1317 (1985); DOI: 10.1109/JQE.1985.1072847.
  19. T. Matsuoka, H. Nagai, and Y. Yoshikuni, “Verification of the Light Phase Effect at the Facet on DFB Laser Properties”, IEEE J. Quantum Electron., QE-21, 12, pp. 1880-1886 (1985); DOI: 10.1109/JQE.1985.1072596.
  20. H. Nagai, T. Matsuoka, Y. Noguchi, Y. Suzuki,and Y. Yoshikuni, “InGaAsP/InP DFB-BH Lasers with Both Facets Cleaved Structures”, IEEE J. Quantum Electron., QE-22, 3, pp. 450-457 (1986); DOI: 10.1109/JQE.1986.1072981.
  21. T. Matsuoka, “Temperature Range for DFB Mode Oscillation in 1.5 µm InGaAsP/InP DFB Lasers”, Jpn. J. Appl. Phys., 25, No. 8R, pp. 1206-1210 (1986); DOI: 10.1143/JJAP.25.1206.
  22. T. Matsuoka and H. Nagai, “InP Etchant for Submicron Patterns”, J. Electrochem. Soc., 133, 12, pp. 2485-2491 (1986); DOI: 10.1149/1.2108455.
  23. J. Yoshida, Y. Itaya, Y. Noguchi, T. Matsuoka, and Y. Nakano, “Sufficiently Side-Mode-Suppressed High-Output Power 1.5 µm DFB Lasers”, Electron. Lett., 22, Issue 6, pp. 327-328 (1986); DOI: 10.1049/el:19860224.
  24. Y. Yoshikuni, K. Oe, G. Motosugi, and T. Matsuoka, “Broad Wavelength Tuning under Single-Mode Oscillation with a Multi-Electrode Distributed Feedback Laser”, Electron. Lett., 22, Issue 22, pp. 1153-1154 (1986); DOI: 10.1049/el:19860789.
  25. 松岡 隆志、吉国 裕三、本杉 常治、遠谷 光広, “高出力1.5 µm帯分布帰還形レーザの設計とその特性”, 信学会, J70-C, 3, pp. 369-378 (1987).
  26. T. Matsuoka and K. Iwashita, “History of Distributed Feedback Laser”, Proc. History of Electrotechnology Conference (HISTELCON 2017), pp. 127-132 (2017); DOI: 10.1109/HISTELCON.2017.8535593.

窒化物半導体分野

  1. T. Sasaki and T. Matsuoka, “Substrate-Polarity Dependence of Metal-Organic Vapor-Phase Epitaxy-Grown GaN on SiC”, J. Appl. Phys., 64, Issue 9, pp. 4531-4535 (1988); DOI: 10.1063/1.341281.
  2. T. Sasaki, T. Matsuoka, and A. Katsui, “MOVPE-Grown GaN on Polar Planes of 6H-SiC”, Appl. Surf. Sci., 41/42, pp. 504-508 (1989); DOI: 10.1016/0169-4332(89)90110-4. (published in 1990.)
  3. T. Matsuoka, H. Tanaka, T. Sasaki, and A. Katsui, “Wide-Gap Semiconductor (In, Ga)N”, in Inst. Phys. Conf. Ser., 106, pp. 141-146 (1990).
  4. T. Matsuoka, T. Sasaki, and A. Katsui, “Growth and Properties of a Wide-Gap Semiconductor InGaN”, J. Optoelectronics, 5, Issue 1, pp. 53-64 (1990).
  5. H. Satoh, T. Sasaki, T. Matsuoka, and A. Katsui, “Crystallinity of GaN Film Grown by ECR Plasma-Excited MOVPE”, Jpn. J. Appl. Phys., 29, No. 9R, pp. 1654-1655 (1990); DOI: 10.1143/JJAP.29.1654.
  6. N. Yoshimoto, T. Matsuoka, T. Sasaki, and A. Katsui, “Photoluminescence of InGaN Films Grown at High Temperature by MOVPE”, Appl. Phys. Lett., 59, Issue 18, pp. 2251-2253 (1991); DOI: 10.1063/1.106086.
  7. H. Tanaka, F. Shimokawa, T. Sasaki, and T. Matsuoka, “Reactive Fast Atom Beam Etching of a Wide-Gap Semiconductor GaN”, J. Optoelectronics, 6, 1, pp. 150-153 (1991).
  8. T. Matsuoka, N. Yoshimoto, T. Sasaki, and A. Katsui, “Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE”, J. Electronic Mat., 21, Issue 2, pp. 157-163 (1992); DOI: 10.1007/BF02655831.
  9. < Invited Paper >
    T. Matsuoka, “Current Status of GaN and Compounds as Wide-Gap Semiconductor”, J. Crystal Growth, 124, Issue 1-4, pp. 433-438 (1992); DOI: 10.1016/0022-0248(92)90496-6.
  10. < Invited Paper >
    T. Matsuoka, A. Ohki, T. Ohno, and Y. Kawaguchi, “Comparison of GaN- and ZnSe- Based Materials for Light Emitters”, J. Crystal Growth, 138, Issue 1-4, pp. 727-736 (1994); DOI: 10.1016/0022-0248(94)90898-2.
  11. T. Sasaki and T. Matsuoka, “Analysis of 2-Step Growth Conditions for GaN on an AlN Buffer Layer”, J. Appl. Phys., 77, Issue 1, pp. 192-200 (1995); DOI: 10.1063/1.359368.
  12. < Invited Paper >
    T. Matsuoka, “The InGaAlN System as a Competitor of ZnSe”, Phys. Status Solidi B, 187, Issue 2, pp. 471-476 (1995); DOI: 10.1002/pssb.2221870228.
  13. < Invited Paper >
    T. Matsuoka,“InGaAlN and Ⅱ–Ⅵ Systems for Blue-Green Light-Emitting Devices”, Advanced Mat., 8, 6, pp. 469-479 (1996); DOI: 10.1002/adma.19960080603.
  14. < Invited Paper >
    T. Matsuoka, “Lattice-Matching Growth of InGaAlN Systems”, Proc. Fall Meeting of Material Research Symposium, 395, pp. 39-50 (1996).
  15. H. Tanaka, A. Nakadaira, and T. Matsuoka, “Reactive Fast-Atom-Beam-Etching of GaN, InGaN, and AlGaN using Cl2”, Proc. the Topical Workshop on Ⅲ-Ⅴ Nitrides, pp. 71-73, Elsevier Science Ltd. (1997).
  16. T. Matsuoka, “Calculation of Unstable Mixing Region in Wurtzite In1-X-YGaXAlYN”, Appl. Phys. Lett., 71, Issue 1, pp. 105-106 (1997); DOI: 10.1063/1.119440.
  17. T. Matsuoka, “Unstable Mixing Region in Wurtzite In1-X-YGaXAlYN”, J. Crystal Growth, 189/190, pp. 19-23, (1998); DOI: 10.1016/S0022-0248(98)00148-1.
  18. T. Matsuoka, “Phase Separation in Wurtzite In1-X-YGaXAlYN”, MRS Internet J. Nitride Semicond. Res., 3, article 54 pp. 1-5 (1998); DOI: 10.1557/S1092578300001265.
  19. T. Matsuoka and T. Ishii, “Polarity of GaN Grown on (001) β-LiGaO2”, in Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, pp. 11-14 (2000)
  20. T. Matsuoka, T. Itoh,and T. Kainoh, “First Plastic Optical Fiber Transmission Experiment using Blue-Green LEDs with Intensity Modulation/Direct Detection”, Electron. Lett., 36, Issue 22, pp. 1836-1837 (2000); DOI: 10.1049/el:20001336.
  21. T. Matsuoka, T. Ohno, A. Ohki, Y. Kawaguchi, “Green LEDs Look Good for Plastic-Fiber LAN Transmission”, Laser Focus World, 37, Issue 1, p. 9 (2001).
  22. T. Matsuoka and E. Hagiwara, “GaN Growth on Novel Lattice-Matching Substrate -Tilted MPlane Sapphire”, Phys. Status Solidi A, 188, Issue 2, pp. 485-489 (2001); DOI: 10.1002/1521-396X(200112)188:2<485::AID-PSSA485>3.0.CO;2-%23.
  23. T. Matsuoka, H. Okamoto,M. Nakao,H. Harima,andE. Kurimoto,“Optical Band-Gap Energy of Wurtzite InN”, Appl. Phys. Lett., 81, 7, pp. 1246-1248 (2002); DOI: 10.1063/1.1499753.
  24. T. Matsuoka, M. Nakao, H. Okamoto, H. Harima,and E. Kurimoto,“Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN”, Jpn. J. Appl. Phys., 42, No. 4S, pp. 2288-2290 (2003); DOI: 10.1143/JJAP.42.2288.
  25. T. Matsuoka, H. Okamoto, and M. Nakao, “Growth of Wurtzite InN using MOVPE and its Optical Characteristics”, Phys. Status Solidi C, 0, Issue 7, pp. 2806-2809 (2003); DOI: 10.1002/pssc.200303301.
  26. T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto, “MOVPE Growth and Photoluminescence of Wurtzite InN”, J. Cryst. Growth, 269, Issue 1, pp. 139-144 (2004); DOI: 10.1016/j.jcrysgro.2004.05.057.
  27. < Invited Paper >
    T. Matsuoka, “Progress in Nitride Semiconductors from GaN to InN — MOVPE Growth and Characteristics;”, SSuperlattices Microstruct., 37, pp. 19-32 (2005); DOI: 10.1016/j.spmi.2004.06.003.
  28. T. Mitate, H. Takahata, S. Mizuno,T. Matsuoka, and N. Kuwano, “InN Polarity Determination by Convergent-Beam Electron Diffraction”, Appl. Phys. Lett., 86, Issue 13, article 134103 pp. 1-3 (March 28, 2005); DOI: 10.1063/1.1885174.
  29. < Invited Paper >
    T. Matsuoka, “Nitride Semiconductor Technologies for Blue Lasers”, Proc. SPIE, "Optomechatronic Micro/Nano Devices and Components”, 6050, article 60500K pp. 1-9 (2006); DOI: 10.1117/12.659862.
  30. T. Matsuoka, T. Mitate, H. Takahata, S. Mizuno, Y. Uchiyama, A. Sasaki, M. Yoshimoto, T. Ohnishi, and M. Sumiya, “N-Polarity GaN on Sapphire Substrate Grown by MOVPE”, Phys. Status Solidi B, 243, Issue 7, pp. 1446-1450 (2006); DOI: 10.1002/pssb.200565456.
  31. J. J. Kim, E. Ikenaga, M. Kobata,A. Takeuchi, M. Awaji, H. Makino, P. P. Chen, A. Yamamoto, T. Matsuoka, D. Miwa, Y. Nishino, T. Yamamoto, T. Yao, and K. Kobayashi, “High Resolution Hard X-Ray Photoemission using Synchrotron Radiation as an Essential Tool for Characterization of Thin Solid Films”, Appl. Surf. Sci., 252, Issue 15, pp. 5602–5606 (2006); DOI: 10.1016/j.apsusc.2005.12.032.
  32. < Invited Paper >
    T. Matsuoka, “New Possibility of MOVPE–Growth in GaN and InN: Polarization in GaN and Nitrogen-Incorporation in InN —”, Proc. SPIE, "Gallium Nitride Materials and Devices Ⅱ”, 6473, pp. 1-12 (2007); DOI: 10.1117/12.707607.
  33. T. Kimura and T. Matsuoka, “Calculation of Phase Separation in Wurtzite In1-x-y-zGaxAlyBzN”, Jpn. J. Appl. Phys., 46, No. 6L(24), pp. L574-L576 (2007); DOI: 10.1143/JJAP.46.L574.
  34. M. Nakao, T. Shimada, M. Wakaba, N. Motegi, A. Gomyo, S. Mizuno, and T. Matsuoka, “1.5-μm Emission of Slightly Oxidized InN Crystals Grown by MOVPE”, Phys. Status Solidi C, 5, Issue 9, pp. 3063-3065 (2008); DOI: 10.1002/pssc.200779273.
  35. < Invited Paper >
    T. Matsuoka and M. Nakao, “Mysterious Material InN in Nitride Semiconductors, – What's the Bandgap Energy and its Application?”, The 2007 IEEE 19th Intern. Conf. Indium Phosphide and Related Mat. (IPRM) Proceedings, pp. 372-375 (2008); DOI: 10.1109/ICIPRM.2007.381201
  36. < Invited Paper >
    T. Matsuoka, “Progress in MOVPE-Growth of GaN to InN”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅴ”, 6900, article 69000S pp. 1-6 (2008); DOI: 10.1117/12.768644.
  37. Y. H. Liu, T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Y. Ji, and T. Matsuoka, “MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor”, Phys. Status Solidi C, 6, Issue S2, pp. S381-S384 (2009); DOI: 10.1002/pssc.200880914.
  38. M. Nakao, T. Kimura, Y. H. Liu, S. Y. Ji, and T. Matsuoka, “Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers”, Phys. Status Solidi C, 6, S2, pp. S893-S896 (2009); DOI: 10.1002/pssc.200880909.
  39. S. Miyazawa, S. Ichikawa, Y. H. Liu, S. Y. Ji, T. Matsuoka, and H. Nakae, “A Novel Substrate LaBGeO5 Lattice-Matching to InN”, Phys. Status Solidi A, 208, Issue 5, pp. 1195-1198 (2011); DOI: 10.1002/pssa.201000909.
  40. Y. T. Zhang, Y. H. Liu, T. Kimura, M. Hirata, K. Prasertsuk, R. Katayama, and T. Matsuoka, “Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi C, 8, Issue 2, pp. 482–484 (2011); DOI: 10.1002/pssc.201000464.
  41. T. Hanada, T. Shimada, S. Y. Ji, K. Hobo, Y. H. Liu, and T. Matsuoka, “Strain Relaxation Mechanism of InGaN Thin Film Grown on m-GaN”, Phys. Status Solidi C, 8, Issue 2, pp. 444-446 (2011); DOI: 10.1002/pssc.201000565.
  42. < Invited Paper >
    T. Matsuoka,Y. H. Liu, T.Kimura, Y. T. Zhang,K.Prasertsuk, and R.Katayama, “Paving the Way to High-Quality Indium Nitride: The Effects of Pressurized Reactor -”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅷ”, 7945, article 794519 pp. 1-5 (2011); DOI: 10.1117/12.869771.
  43. K. Prasertsuk, Y. H. Liu, T. Kimura, Y. T. Zhang, T. Iwabuchi, R. Katayama, and T. Matsuoka, “Relationship between Residual Carrier Density and Phase Purity in InN Grown by Pressurized-Reactor MOVPE”, Phys. Status Solidi C, 9, 3-4, pp. 681–684 (2012); DOI:10.1002/pssc.201100404.
  44. J. G. Kim, Y. Kamei, A. Kimura, N. Hasuike, H. Harima, K. Kisoda, Y. H. Liu, and T. Matsuoka, “Raman-scattering Characterization of InN Films Grown by Pressurized Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi B, 249, Issue 4, pp. 779-783 (2012); DOI: 10.1002/pssb.201147452.
  45. T. Kimura, K. Prasertsuk, Y. T. Zhang, Y. H. Liu, R .Katayama, and T. Matsuoka, “Phase Diagram on Phase Purity of InN Grown Pressurized-Reactor MOVPE”, Phys. Status Solidi C, 9, Issue 3-4, pp. 654-657 (2012); DOI: 10.1002/pssc.201100390.
  46. J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of Nitridation on Indium-Composition of InGaN Films”, Key Eng. Mater., 508, pp. 193-198 (2012); DOI: 10.4028/www.scientific.net/KEM.508.193.
  47. R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, S .Kurokawa, N. Fujii, and T. Matsuoka, “Optical Properties of the Periodic Polarity-Inverted GaN Waveguides”, Proc. SPIE, "Quantum Sensing and Nanophotonic Devices Ⅸ”, 8268, article 826814 pp. 1-10 (2012); DOI: 10.1117/12.909831.
  48. K. Shojiki, T.Hanada, T.Shimada, Y. H.Liu, R. Katayama,and T. Matsuoka, “Tilted Domain and Indium Content of MOVPE-Grown InGaN Layer on m-Plane GaN Substrate”, Jpn. J. Appl. Phys., 51, No.4S, article 04DH01 pp. 1-4 (2012); DOI: 10.1143/JJAP.51.04DH01.
  49. T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanebe, N. Usami, R. Katayama, and T. Matsuoka, “Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN”, Jpn. J. Appl. Phys., 51, No. 4S, article 04DH02 pp. 1-4 (2012); DOI: 10.1143/JJAP.51.04DH02.
  50. K. Kobayashi, M. Kano, T. Yoshida, R. Katayama, T. Matsuoka, T. Otsuji, and T. Suemitsu, “AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks”, Phys. Status Solidi C, 10, Issue 5, pp. 790-793 (2013); DOI: 10.1002/pssc.201200609.
  51. J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Investigation of Indium Incorporation into InGaN by Nitridation of Sapphire Substrate in MOVPE”, Phys. Status Solidi C, 10, Issue 3, pp. 417-420 (2013); DOI: 10.1002/pssc.201200667.
  52. Y. T. Zhang, T. Kimura, K. Prasertsuk, T. Iwabuchi, S. Kumar, Y. H. Liu, R. Katayama, and T. Matsuoka, “Optical Properties of InN Films Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy”, Thin Solid Films, 536, pp. 152-155 (2013); DOI: 10.1016/j.tsf.2013.04.004.
  53. 小林 健悟, 吉田 智洋, 尾辻 泰一, 片山 竜二, 松岡 隆志, 末光 哲也, “SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT”, 信学技報, 112, 380, pp. 75-78 (2013).
  54. T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Hanada, R. Katayama, and T. Matsuoka, “Improvement of Surface Morphology of Nitrogen-Polar GaN by Introducing Indium Surfactant during MOVPE Growth”, Jpn. J. Appl. Phys., 53, No. 8, article 085501 pp. 1-4 (2014); DOI: 10.7567/JJAP.53.085501.
  55. T. Tanikawa, K. Shojiki, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Enhancement of Surface Migration by Mg doping in the Metalorganic Vapor Phase Epitaxy of (0001) GaN/Sapphire”, Jpn. J. Appl. Phys., 53, No. 5S1, article 05FL05 pp. 1-4 (2014); DOI: 10.7567/JJAP.53.05FL05.
  56. K. Shojiki, J. H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of c-Plane Sapphire Substrate Miscut-Angle on Indium Content of MOVPE-Grown N-Polar InGaN”, Jpn. J. Appl. Phys., 53, No. 5S1, article 05FL07 pp. 1-5 (2014); DOI: 10.7567/JJAP.53.05FL07.
  57. J. H. Choi,K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka, “Effect of Sapphire Nitridation and Group-Ⅲ Source FlowRate Ratio on In-Incorporation into InGaN Grown by Metalorganic Vapor Phase Epitaxy”, J. Nanosci. Nanotechnol., 14, No. 8, pp. 6112-6115 (2014); DOI: 10.1166/jnn.2014.8306.
  58. T. Matsuoka, Foreword in “Progresses and Future Prospects in Nitride Semiconductors: Crystal Growth and Device Applications”, Jpn. J. Appl. Phys., 53, No. 10, article 100200 p. 1 (2014); DOI: 10.7567/JJAP.53.100200.
  59. T. Matsuoka, “Overview of Nitride Semiconductors”, Int. J. Optomechatronics, 9, Issue 1, pp. 1-8 (2015); DOI: 10.1080/15599612.2014.944292.
  60. K. Shojiki, T. Tanikawa, J. H. Choi, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Red to Blue Wavelength Emission of N-Polar (0001) InGaN Light-Emitting Diodes Grown by Metalorganic Vapor Phase Epitaxy”, Appl. Phys. Express, 8, No. 6, article 061005 pp. 1-4 (2015); DOI: 10.7567/APEX.8.061005.
  61. K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Suppression of Metastable-Phase Inclusion in N-Polar (0001) InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy”, Appl. Phys. Lett., 106, Issue 22, article 222102 pp. 1-4 (2015); DOI: 10.1063/1.4922131.
  62. T. Aoki, T. Tanikawa, R. Katayama, T. Matsuoka, and K. Shiojima, “Electrical Characteristics of N-Polar (0001) p-Type GaN Schottky Contacts”, Jpn. J. Appl. Phys., 55, No. 4S, article 04EJ09 pp. 1-5 (2016); DOI: 10.7567/JJAP.55.04EJ09.
  63. J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka, “Polarity Control of GaN Grown on PLD-AlN/GaN Templates by MOVPE”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FA04 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FA04.
  64. K. Shojiki, T. Hanada, T. Tanikawa, Y. Imai, S. Kimura, R. Nonoda, S. Kuboya, R. Katayama, and T. Matsuoka, “Homogeneity Improvement of N-Polar (0001)InGaN/GaN Multiple Quantum Wells by Changing Substrate Off-Cut-Angle Direction”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FA09 pp. 1-8 (2016); DOI: 10.7567/JJAP.55.05FA09.
  65. A. Yamamoto, K. Kodama, N. Shigekawa, T. Matsuoka, and M. Kuzuhara, “Low-Temperature (≧ 400°C) Growth of InN by Metalorganic Vapor Phase Epitaxy using an NH3 Decomposition Catalyst”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FD04 pp. 1-5 (2016); DOI: 10.7567/JJAP.55.05FD04.
  66. R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka, “Effects of Mg/Ga and Ⅴ/Ⅲ Source Ratios on Hole Concentration of N-Polar (0001) p-Type GaN Grown by MOVPE”, Jpn. J. Appl. Phys., 55, No. 5S, article 05FE01 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FE01.
  67. T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, and T. Matsuoka, “Large Stokes Shift in N-Polar (0001) InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes”, Jpn. J. Appl. Phys., 55, No 5S, article 05FJ03 pp. 1-4 (2016); DOI: 10.7567/JJAP.55.05FJ03.
  68. A. Yamamoto, K.Kodama, T.Matsuoka, and M.Kuzuhara, “Low-Temperature (≦ 600°C) Growth of High-Quality InXGa1-XN (x ∼ 0.3) by Metalorganic Vapor Phase Epitaxy using an NH3 Decomposition Catalyst”, Jpn. J. Appl. Phys., 56, No. 4, article 041001 pp. 1-5 (2017); DOI: 10.7567/JJAP.56.041001.
  69. T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, T. Matsuoka, Y. Honda, and H. Amano, “Absolute Technique for Measuring Internal Electric Fields in InGaN/GaN Light-Emitting Diodes by Applicable to All Crystal Orientations”, Appl. Phys. Express, 10, No. 8, article 082101 pp. 1-4 (2017); DOI: 10.7567/APEX.10.082101.
  70. T. Tanikawa, S. Kuboya, and T. Matsuoka, “Control of Impurity Concentration in N-Polar (0001)GaN Grown by Metalorganic Vapor Phase Epitaxy”, Phys. Status Solidi B, 254, Issue 8, article 1600751 pp. 1-5 (2017); DOI: 10.1002/pssb.201600751.
  71. T. Iwabuchi, S. Kuboya, T. Tanikawa, T. Hanada, R. Katayama, T. Fukuda, and T. Matsuoka, “Ga-Polar GaN Film grown by MOVPE on Cleaved ScAlMgO4(0001) Substrate with Millimeter Scale Wide Terraces”, Phys. Status Solidi A, 214, Issue 9, article 1600754 pp. 1-8 (2017); DOI: 10.1002/pssa.201600754.
  72. T. Matsuoka, “History of Blue LED Consisted of Nitride Semiconductors”, Proc. History of Electro-technology Conference (HISTELCON 2017), pp. 121-126 (2017); DOI: 10.1109/HISTELCON.2017.8535864.
  73. K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka, “Halide Vapor Phase Epitaxy of Thick GaN Films on ScAlMgO4 Substrates and their Self-Separation for Fabricating Free-Standing Wafers”, Appl. Phys. Express, 10, No,10, article 101001 pp. 1-4 (2017); DOI: 10.7567/APEX.10.101001.
  74. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, “N-Polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE”, IEICE Technical Report, ED2017-26, CPM2017-12, SDM2017-20, pp. 59-64 (2017).
  75. 谷川 智之, プラスラットスック キャッティウット, 木村 健司, 窪谷 茂幸, 松岡 隆志, “有機金属気相成長法によるN極性窒化物半導体の成長技術”, 日本結晶成長学会誌, 45, No. 1, pp. 1-8 (2018); DOI: 10.19009/jjacg.3-45-1-01.
  76. K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka, “N-Polar GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor Formed on Sapphire Substrate with Minimal Step Bunching”, Appl. Phys. Express, 11, No. 1, article 015503 pp. 1-4 (2018); DOI: 10.7567/APEX.11.015503.
  77. T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka, “Three-Dimensional Imaging of Threading Dislocations in GaN Crystals by Two-Photon-excitation Photoluminescence”, Appl. Phys. Express, 11, article 031004 pp. 1-4 (2018); DOI: 10.7567/APEX.11.031004.
  78. T. Hanada, H. Tajiri, O. Sakata, T. Fukuda, and T. Matsuoka, “Characterization of the ScAlMgO4 Cleaving Layer by X-Ray Crystal Truncation Rod Scattering”, J. Appl. Phys., 123, Issue 20, article 205305 pp. 1-8 (2018); DOI: 10.1063/1.5031024.
  79. K. Ohnishi, S. Kuboya, T. Tanikawa, T. Iwabuchi, K. Yamamura, N. Hasuike, H. Harima, T. Fukuda, and T. Matsuoka, “Reuse of ScAlMgO4 Substrates Utilized for Halide Vapor Phase Epitaxy of GaN”, Jpn. J. Appl. Phys., 58, No. SC, article SC1023, pp. 1-5 (2019); DOI: 10.7567/1347-4065/ab06ab.
  80. T. Matsuoka, “Current Status, and Future of Research on Optical and Electrical Semiconductor Devices”, IEEE Xplore digital library published in 2019 IEEE 5th International Workshop on Metrology for AeroSpace (MetroAeroSpace), pp. 154-159, DOI: 10.1109/MetroAeroSpace.2019.8869693.
  81. V. Suresh Kumar, S. Y. Ji, Y. T. Zhang, K. Shojiki, J. H. Choi, T. Kimura, T. Hanada, R. Katayama, and T. Matsuoka, “Dependence of the Ⅴ/Ⅲ Ratio on Indium Incorporation in InGaN Films Grown by Metalorganic Vapour Phase Epitaxy”, J. Nanosci. Nanotechnol., 20, pp. 2979-2986 (2020); DOI: 10.1166/jnn.2020.17466.
  82. K. Prasertsuk, T. Suemitsu, and T. Matsuoka, “Reverse Bias Annealing Effects in N-Polar GaN/AlGaN Metal-Insulator-Semiconductor High Electron Mobility Transistors”, Jpn. J. Appl. Phys., 61, No. SA, article SA1006 pp. 1-6 (2022); DOI: 10.35848/1347-4065/ac2214.
  83. T. M. Inerbaev, T. Matsuoka, and Y. Kawazoe, “Optical Band Gap Energy Values in Wurtzite InxGa1-xN”, Bulletin of The University of Karaganda-Physics, 105, Issue 1, pp. 107-116 (2022); DOI: 10.31489/2022PH1/107-116.
  84. T. Matsuoka, T. Mitate, S. Mizuno, H. Takahata, and T. Tanikawa, “N-Polar Growth of Nitride Semiconductors with MOVPE and its Applications”, J. Cryst. Growth, 606, 127056 (2023); DOI: 10.1016/j.jcrysgro.2022.127056.
  85. T. Matsuoka, H. Morioka, S. Semboshi, Y. Okada, S. Kuboya, H. Okamoto, and T. Fukuda, “Properties of ScAlMgO4 as Substrate for Nitride Semiconductors”, Crystals, 13, Issue 3, article 449 pp.1-13 (2023); DOI: 10.3390/cryst13030449.

Ⅱ–Ⅵ半導体分野

  1. T. Ohno, Y. Kawaguchi, A. Ohki, and T. Matsuoka, “ZnCdSe/ZnSe Quantum-Well Laser Diode on a (711)A GaAs Substrate”, Jpn. J. Appl. Phys., 33, Part 1, No. 10R, pp. 5766-5773 (1994); DOI: 10.1143/JJAP.33.5766.
  2. K. Iwata, H. Asahi, J. H. Kim, X. F. Liu, S. Gonda, Y. Kawaguchi, A. Ohki, and T. Matsuoka, “Gas Source Molecular Beam Epitaxy Growth of InAlP Band-Offset Reduction Layer on p-Type ZnSe”, J. Cryst. Growth, 150, Part 2, pp. 833-837 (1995); DOI: 10.1016/0022-0248(95)80056-I.
  3. T. Matsuoka, T. Ohno, and A. Ohki, “Effect of Tilted Substrates on p-Type Doping in ZnSe and ZnCdSe/ZnSe Quantum Wells”, Phys. Status Solidi B, 187, Issue 2, pp. 401-406 (1995); DOI: 10.1002/pssb.2221870219.
  4. K. Iwata, H. Asahi, T. Ogura, J. Sumino, S. Gonda, A. Ohki, Y. Kawaguchi,and T. Matsuoka, “Low Temperature Grown Be-Doped InAlP Band-Offset Reduction Layer to p-Type ZnSe”, J. Electron. Mater., 25, 4, pp. 637-641 (1996); DOI: 10.1007/BF02666516.
  5. T. Ohno, A. Ohki, and T. Matsuoka, “Investigation of Degradation in Homoepitaxially Grown ZnCdSe/ZnSe Light Emitting Diode”, Jpn. J. Appl. Phys., 36, No. 2B, pp. L190-L193 (1997); DOI: 10.1143/JJAP.36.L190.
  6. A. Ohki, T. Ohno, and T. Matsuoka, “Continuous-Wave Operation of ZnSe-Based Laser Diodes Homoepitaxially Grown on Semi-Insulation ZnSe Substrates”, Electron. Lett., 33, Issue 11, pp. 990-991 (1997); DOI: 10.1049/el:19970624.
  7. T. Ohno, A. Ohki, and T. Matsuoka, “Room-Temperature CW Operation of Ⅱ–Ⅵ Laser Grown on ZnSe Substrate Cleaned with Hydrogen Plasma”, J. Crystal Growth, 184/185, pp. 550-553 (1998); DOI: 10.1016/S0022-0248(98)80114-0.
  8. T. Ohno, A. Ohki, and T. Matsuoka, “Surface Cleaning with Hydrogen Plasma for Low-Defect-Density ZnSe Homoepitaxial Growth”, J. Vac. Sci. Technol. A., 16, 4, pp. 2539-2545 (1998); DOI: 10.1116/1.581378.

その他の分野

  1. K. Nakashima and T. Matsuoka, “A Simple Method for Analyzing Peak Broadening due to Tilt and Twist Distributions in X-Ray Diffraction Measurements of Materials of Arbitrary Type”, J. Appl. Crystallogr., 41, part 1, pp. 191-197 (2008); DOI: 10.1107/S0021889807064011.
  2. D. Ehrentraut, G. K. L. Goh., K. Fujii, C. C. Ooi, L.H. Quang, T. Fukuda, M. Kano, Y. Zhang, and T .Matsuoka, “Homoepitaxy of ZnO and MgZnO Films at 90°C”, J. Solid State Chem., 214, pp. 96–100 (2014); DOI: 10.1016/j.jssc.2013.10.008.
  3. A. Ishibashi, T. Matsuoka, R. Enomoto, and M. Yasutake, “New Solar Cell and Clean Unit System Platform (CUSP) for Earth and Environmental Science”, IOP Conf. Ser: Earth Environ. Sci., 93, article 012081 pp. 1-7 (2017); DOI: 10.1088/1755-1315/93/1/012081.
  4. A. Ishibashi, N. Sawamura, T. Matsuoka, H. Kobayashi, and T. Kasai, “Asymmetric Waveguide-Coupled Scheme for Multi-striped Orthogonal Photon-Photocarrier-Propagation Solar Cell (MOP3SC)”, Trans. Mater. Res. Soc. Jpn., 44, 5, pp. 187-191 (2019); DOI: 10.14723/tmrsj.44.187.